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SB1060LCT_10001

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size101KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance  

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB1060LCT_10001 Overview

Rectifier Diode

SB1060LCT_10001 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Reach Compliance Codecompliant
Is SamacsysN
Diode typeRECTIFIER DIODE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

SB1060LCT_10001 Preview

Download Datasheet
SB1060LCT
DUAL LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Low forward voltage drop, low power losses
• High efficiency operation
• Lead free in comply with EU RoHS 2002/95/EC directives
60 Volts
CURRENT
10 Amperes
MECHANICAL DATA
Case : TO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.065 ounces, 1.859 grams
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig.1)
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Typical thermal resistance
Operating junction
Storage temperature range
per device
per diode
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
R
ΘJC
T
J
T
STG
VALUE
60
10
5
125
2 .5
-55 to + 125
-55 to + 150
O
UNIT
V
A
A
C / W
o
C
C
o
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
=1mA
I
F
=2.5A
I
F
=5A
I
F
=2.5A
I
F
=5A
V
R
=60V
T
J
=25
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=100
o
C
MIN.
68
-
-
-
-
-
-
TYP.
-
0.40
0.45
0.30
0.39
200
-
MAX.
-
-
0.48
-
0.45
500
30
UNIT
V
V
V
μA
mA
Instantaneous forward voltage per
diode
(1)
V
F
Reverse current per diode
(2)
I
R
Note.1.Pulse test : 300μs pulse width, 1% duty cycle
2.Pulse test : pulse width < 40ms
December 13,2012-REV.02
PAGE . 1
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