S9014
Transistors
SOT-23
SOT-23 Plastic-Encapsulate Transistors(NPN)
RHOS
Features
As complementary type the PNP transistor S9015 is recommended
Epitaxial planar die construction
Maximum Ratings
(
Ratings at 25℃ ambient temperature unless otherwise specified.)
Symbol
1. BASE
2. EMITTER
3. COLLECTOR
Parameter
Value
50
45
5
100
200
625
150
-55 to +150
Units
V
V
V
mA
mW
℃/W
℃
℃
V
CBO
V
CEO
V
EBO
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
MARKING: 1AM
P
C
R
θJA
T
J
T
stg
Electrical Characteristics
(
Ratings at 25℃
ambient temperature unless otherwise specified).
Parameter
Symbols
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Test Condition
I
C
=100uA, I
E
=0
I
C
=0.1mA, I
B
=0
I
E
=100uA, I
C
=0
V
CE
=35V, I
B
=0
V
CB
=50V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=100mA, I
B
=5mA
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=10mA,f=30MHz
Limits
Min
50
45
5
Max
Unit
V
V
V
nA
nA
nA
V
V
MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
CLASSIFICATION OF h
FE(1)
RANK
RANGE
200
100
100
100
1000
0.30
1.00
150
L
200-450
H
450-1000
Rev 8: Nov 2014
www.born-tw.com
Page 1 of 2
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