S9012
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into three groups, G,
H and I, according to its DC current gain. As
complementary type the NPN transistor 9013 is
recommended.
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
P
tot
T
j
T
stg
Value
40
30
5
500
625
150
- 55 to + 150
Unit
V
V
V
mA
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 1 V, -I
C
= 50 mA
Current Gain Group G
H
I
at -V
CE
= 1 V, -I
C
= 500 mA
Collector Base Cutoff Current
at -V
CB
= 35 V
Emitter Base Cutoff Current
at -V
EB
= 5 V
Collector Base Breakdown Voltage
at -I
C
= 100
μA
Collector Emitter Breakdown Voltage
at -I
C
= 1 mA
Emitter Base Breakdown Voltage
at -I
E
= 100
μA
Collector Emitter Saturation Voltage
at -I
C
= 500 mA, -I
B
= 50 mA
Base Emitter Saturation Voltage
at -I
C
= 500 mA, -I
B
= 50 mA
Base Emitter Voltage
at -V
CE
= 1 V, -I
C
= 100 mA
Gain Bandwidth Product
at -V
CE
= 6 V, -I
C
= 20 mA
Symbol
h
FE
h
FE
h
FE
h
FE
-I
CBO
-I
EBO
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
BE(sat)
-V
BE
f
T
Min.
110
190
290
40
-
-
40
30
5
-
-
-
100
Max.
200
300
380
-
100
100
-
-
-
0.6
1.2
1
-
Unit
-
-
-
-
nA
nA
V
V
V
V
V
V
MHz
RF/Wirelessly
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