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S3JBG

Description
DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 3A Forward voltage drop (Vf): 1.1V @ 3A
CategoryDiscrete semiconductor    General diode   
File Size355KB,3 Pages
ManufacturerSHIKUES
Websitehttp://www.shike.tw
Shike, originated from Taiwan, China, is one of the world's leading semiconductor discrete component manufacturers. It mainly provides engineers and designers with various semiconductor products and software, bringing better sensory experience to products such as automobiles, communications, computers, consumer electronics, industry, LED lighting, medical and power applications. Since its establishment, under the guidance of the core concept of "making products have good cores", with safety, low energy consumption and high performance as its purpose, Shike Semiconductor's R&D strategy has never wavered. Nearly a quarter of its employees work in the field of R&D and product design, and annual R&D expenses account for about 22% of total revenue. In addition, with the hard work of young, dream-filled and passionate employees, Shike has developed rapidly, and its products are exported to North America, Europe and the Asia-Pacific region. It is considered one of the most innovative companies in the semiconductor industry. Shike will continue to optimize in terms of safety, energy consumption and performance, and more flexibly meet the needs of design engineers and the ever-changing market. From concept design to production and manufacturing, we will provide full support. Looking to the future, we will focus on innovation and continue to create value for our customers, employees and society as a whole. By reducing energy consumption, improving safety and enhancing performance, we will focus on how to use technological research and development to improve the quality of life of the public. We will go all out to fulfill our commitments.
Download Datasheet Parametric View All

S3JBG Overview

DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 3A Forward voltage drop (Vf): 1.1V @ 3A

S3JBG Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)600V
Average rectified current (Io)3A
Forward voltage drop (Vf)1.1V @ 3A

S3JBG Preview

Download Datasheet
S3ABG THRU S3MBG
Surface Mount General Purpose Silicon Rectifiers
Reverse Voltage - 50 to 1000 V Forward Current - 3 A
PINNING
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Easy to pick and place
• Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
• Case: SMB
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 0.055g / 0.002oz
PIN
1
2
DESCRIPTION
Cathode
Anode
2
1
Top View
Marking Code: S3A~S3M
Simplified outline SMB and symbol
Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter
Maximum Repetitive Peak Reverse Voltage
Symbols
V
RRM
V
RMS
V
DC
I
F(AV)
S3AB
G
S3BB
G
S3DB
G
S3GB
G
S3JB
G
S3KB
G
S3MB
G
Units
V
V
V
50
35
50
100
70
100
200
140
200
400
280
400
3
600
420
600
800
560
800
1000
700
1000
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
Maximum Instantaneous Forward Voltage at 3 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
(1)
A
A
V
I
FSM
90
V
F
1.1
5
100
35
48
16
-55 ~ +150
T
a
= 25
°C
T
a
=125
°C
I
R
μA
C
j
R
θJA
R
θJC
T
j
, T
stg
pF
°C/W
°C
Typical Thermal Resistance
(2)
Operating and Storage Temperature Range
(1)
Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
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