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RS1002FL

Description
Fast switching diodes
CategoryDiscrete semiconductor   
File Size2MB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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RS1002FL Overview

Fast switching diodes

Features

Product Name: Fast Switching Diode


Product model: RS1002FL


product features:


For surface mounted applications


Low profile package


Ideal for automated placement


Glass Passivated Chip Junction


High temperature soldering




Product parameters:


Pd dissipated power: 350mW


Io rectified current: 500mA


VR reverse working voltage: 200V


VF forward buck: 1.15V


IR reverse current: 10uA


Trr Forward recovery time: 150ns



Package: SOD-123

RS1002FL Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
RS1002FL
FAST
SWITCHING
DIODE
SOD-123
FEATURES
For surface mounted applications
Low profile package
Ideal for automated placement
Glass Passivated Chip Junction
High temperature soldering
Marking: 2F
MAXIMUM RATINGS( Ta=25
unless otherwise noted )
Symbol
V
RRM
V
RMS
V
DC
I
O
P
D
R
θJA
T
J
, T
stg
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum
average
rectified output current
Power
dissipation
Thermal resistance
junction
to ambient
air
Junction and storage temperature
Value
200
140
200
1
350
357
-50~+150
A
mW
℃/W
V
Unit
ELECTRICAL CHARACTERISTICS(Ta=25
unless otherwise specified)
Parameter
Maximum instantaneous forward voltage
Maximum DC reverse current at rated DC
blocking voltage
Total capacitance
Reverse recovery
time
Symbol
V
F
I
R
C
tot
t
rr
Test conditions
I
F
=0.7A
V
R
=200V
V
R
=4V,f=1MHz
I
F
=0.5A, I
R
=1A, I
rr
=0.25A
Min
Typ
Max
1.15
10
9
150
Unit
V
μA
pF
ns
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