RB501G-40 datasheet, PDF - EEWORLD Datasheet

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RB501G-40: DescriptionSchottky diodes; CategoryDiscrete semiconductor; File Size114KB，1 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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RB501G-40 Overview

Schottky diodes

Features

Product Name: Schottky Diode

Product model: RB501G-40

product features:

Small Surface Mounting Type

Low Reverse Current and Low Forward Voltage

High Reliability

Product parameters:

Pd power dissipation: 100mW

Io rectified current: 100mA

VR reverse working voltage: 40V

VF forward buck: 0.55V

IR reverse current: 30uA

Trr Forward recovery time:

Package: SOD-723

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOD-723 Plastic-Encapsulate Diodes

RB501G-40

SCHOTTKY BARRIER DIODE

SOD-723

FEATURES

Small Surface Mounting Type

Low Reverse Current and Low Forward Voltage

High Reliability

APPLICATIONS:

Low Current Rectification

MARKING:4

MAXIMUM RATINGS ( T

=25

℃

unless otherwise noted )

Symbol

FSM

ΘJA

stg

Parameter

DC Blocking Voltage

Forward Continuous Current

Non-Repetitive Peak Forward Surge Current

Power Dissipation

Thermal Resistance from Junction to Ambient

Junction Temperature

Storage Temperature

Value

100

1250

150

-55~+150

Unit

℃/W

℃

ELECTRICAL CHARACTERISTICS(T

=25

℃

unless otherwise specified)

Parameter

Reverse voltage

Reverse current

Forward voltage

Total capacitance

Symbol

(BR)

F(1)

F(2)

tot

=100uA

=10V

=10mA

=100mA

=10V,f=1MHz

Test conditions

Min

0.34

0.55

Typ

Max

Unit

µA

A ,Jan,2012

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