KTC4378 datasheet, PDF - EEWORLD Datasheet

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KTC4378: DescriptionNPN transistor; CategoryDiscrete semiconductor; File Size670KB，1 Pages; ManufacturerHI-SINCERITY MICROELECTRONICS CORP.

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KTC4378 Overview

NPN transistor

Features

Product Name: NPN Transistor

Product model: KTC4378

Product parameters:

Pcm (maximum dissipated power): 500mW

Ic (collector current): 1000mA

BVcbo (Collector-Base Breakdown Voltage): 80V

BVceo (Collector-Emitter Breakdown Voltage): 60V

BVebo (emitter-base breakdown voltage): 5V

hFE (current gain): Min: 100, Max: 320

VCE (sat) saturation voltage drop: 0.5V

fT (transition frequency): 150+MHz

Package: SOT-89-3L

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

KTC4378

FEATURES

High voltage

TRANSISTOR (NPN)

SOT-89-3L

1. BASE

2. COLLECTOR

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

CEO

EBO

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

Junction Temperature

Storage Temperature

Value

0.5

150

-55~150

Unit

℃

3. EMITTER

℃

ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

FE(1)

DC current gain

FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

CE(sat)

BE(sat)

=2V,I

=1A

=500mA,I

=50mA

=500mA,I

=50mA

=10V,I

=50mA

=10V,I

=0,f=1MHz

150

0.5

1.2

MHz

Test conditions

=1mA,I

=10mA,I

=1mA,I

=50V,I

=4V,I

=2V,I

=0.05A

100

Min

0.1

320

Typ

Max

Unit

μA

CLASSIFICATION OF h

FE(1)

Rank

Range

Marking

100-200

160-320

TGR

A,Jun,2011

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