RB200 SERIES
2.0 A SILICON BRIDGE RECTIFIERS
VOLTAGE
FEATURES
• Plastic material used carries Underwriters Laboratory recognition.
• High case dielectric strength.
• Typical I
R
LESS Than 1uA.
• Exceeds environmental standards of MIL-STD-19500
• Ideal for printed circuit board.
• High temperature soldering guaranteed: 265
O
C/10 seconds/ .375”
(9.5 mm) lead length/5 Ibs. (2.3kg) tension
• Component are in compliance with EU RoHS 2002/95/EC directives
50 to 1000 Volts
CURRENT
2.0 Amperes
MECHANICALDATA
• Case: Reliable low cost construction utilizing molded plastic technique
• Terminals: Leads solderable per MIL-STD-750, Method 2026
• Mounting Position: Any
• Weight:1.4 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, Single phase, half wave, 60Hz.
For Capacitive load derate current by 20%.
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current .375"
(9.5mm ) Lead Length at T
A
=25
O
C
Peak Forward Surge Current : 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
I
2
t Rating for fusing ( t<8.35ms)
Maximum Forward Voltage Drop per Element at 1.0A
Maximum DC Reverse Current T
A
=25
O
C
at Rated DC Blocking Voltage T
A
=100
O
C
Typical Junction capacitance per bridge element (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
C
J
T
J
T
STG
RB200
50
35
50
RB201
100
70
100
RB202
200
140
200
RB204
400
280
400
2.0
50
15
1.0
10
1
30
-55 to + 125
-55 to + 150
RB206
600
420
600
RB208
800
560
800
RB2010
1000
700
1000
UNITS
V
V
V
A
A
A
2
s
V
µA
pF
O
C
C
O
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
STAD-JAN.11.2007
PAGE . 1
RB200 SERIES
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
80
PEAK FORWARD SURGE CURRENT,
AMPERES
BRIDGE OUTPUT
FULL WAVE RECTIFIED CURRENT
AVERAGE AMPERES
60
40
30
20
10
0
2
4
6
T
A
=25
O
C
8.3ms SINGLE HALF SINE WAVE
JEDED METHOD
0
20
40
60
80
100
O
120
140
10
20
40
60
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
Fig.1 DERATING CURVE OUTPUT RECTIFIED CURRENT
20
Fig.2MAXIMUM NON-REPETITIVE PEAK FORWARD CURRENT
10
INSTANTANEOUS FORWARD CURRENT,
AMPERES
10
INSTANTANEOUS REVERSE CURRENT, uA
T
J
=100
O
C
1.0
1.0
0.1
0.1
T
J
=25
O
C
Pulse Width =300us
1% Duty Cycle
0.01
0.4
T
J
=25
O
C
0.01
1
20
40
60
80
100
120
160
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE
Fig.3 TYPICAL FORWARD CHARACTERISTIC
Fig.4 TYPICAL REVERSE CHARACTERISTICS
100
60
CAPACITANCE, pF
40
20
10
6
4
2
1
.1
.2
.4
1
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
Fig.5 TYPICAL JUNCTION CAPACITANCE
PER BRIDGE ELEMENT
STAD-JAN.11.2007
PAGE . 2
stm32/stm8
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