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RB156

Description
Single Phase 1.5A Silicon Bridge Rectifiers Single Phase 1.5A Silicon Bridge Rectifiers
CategoryDiscrete semiconductor    diode   
File Size77KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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RB156 Overview

Single Phase 1.5A Silicon Bridge Rectifiers Single Phase 1.5A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 1.5A Silicon Bridge Rectifiers


Product model: RB156


product features:


UL Recognized File # E-230084



Surge overload ratings to 40 amperes peak



Ideal for printed circuit boards



Reliable low cost construction technique results in inexpensive product



High temperature soldering guaranteed:


260℃ / 10 seconds / 0.375” ( 9.5mm )


lead length at 5 lbs., ( 2.3 kg ) tension



Mechanical data:


Case: Molded plastic


Lead: solder plated


Polarity: As marked


Weight: 1.07 grams



Maximum Ratings and Electrical Characteristics:


Rating at 25℃ ambient temperature unless otherwise specified.


Single phase, half wave, 60 Hz, resistive or inductive load.


For capacitive load, derate current by 20%



product data:


Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 800V



Maximum RMS Voltage VRMS Voltage effective value: 560V



Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 800V



Maximum Average Forward Rectified Current @TA = 50℃ I(AV) Maximum forward current: 1.5 A



Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM Maximum forward surge current: 40 A



Maximum Instantaneous Forward Voltage @ 1.5A VF Maximum forward voltage drop: 1.0 V



Maximum DC Reverse Current @ TA = 25 ° C IR Maximum reverse leakage current: 5.0 μA


rated DC blocking voltage per leg TA = 100℃ IR Maximum reverse leakage current: 100.0μA



Typical Thermal Resistance (Note) RθJA Thermal resistance coefficient: 36℃/W; RθJL Thermal resistance coefficient: 13℃/W



Operating Temperature Range TJ Operating Junction Temperature: -55 to +125 ℃



Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃



Package: WOB


RB156 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.05 V
Maximum non-repetitive peak forward current50 A
Number of components4
Maximum operating temperature125 °C
Maximum output current1.5 A
Maximum repetitive peak reverse voltage800 V
surface mountNO

RB156 Preview

Download Datasheet
RB151 THRU RB157
桥式整流器
Bridge Rectifier
■特征
Features
■外½尺寸和印记
Outline Dimensions and Mark
I
o
V
RRM
1.5A
50V~1000V
.181(4.60)
.147(3.60)
R B-15
.358(9.10)
.339(8.60)
耐正向浪涌电流½力高
High surge forward current capability
½一般电源单相桥式整流用
General purpose 1 phase Bridge
rectifier applications
DIA
■用途
Applications
1.2(30.5)
M IN
1.0(25.4)
M IN
.032(0.81)
.030(0.76)
.220(5.60)
.180(4.60)
.220(5.60)
.180(4.60)
■极限值(绝对最大额定值)
Limiting Values(Absolute Maximum Rating)
参数名称
Item
反向重复峰值电压
Repetitive Peak Reverse Voltage
平均整流输出电流
Average Rectified Output
Current
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward
Current
正向浪涌电流的平方对电流浪涌
持续
时间的积分值
Current Squared Time
存储温度
Storage Temperature
结温
Junction Temperature
Dim ensions in inches and (m illim eters)
符号
Symbol
V
RRM
I
O
单½
Unit
V
A
条件
Conditions
RB
151 152 153 154 155 156 157
50 100 200 400 600 800 1000
60H
Z
正弦波,电阻负½½,T
a
=40℃
60H
Z
sine wave, R- load, T
a
=40℃
60H
Z
正弦波,一个周期,T
a
=25℃
60H
Z
sine wave, 1 cycle, T
a
=25℃
1ms≤t<8.3ms T
j
=25℃,单个
二极管
1ms≤t<8.3ms T
j
=25℃,Rating of
per diode
1.5
I
FSM
A
50
I
2
t
A
2
s
10
T
stg
T
j
-55 ~+150
-55 ~+125
■电特性 (T
a=25℃
除非另有规定)
Electrical Characteristics
(T
a
=25℃ Unless otherwise specified)
参数名称
Item
符号
单½
Symbol Unit
V
FM
I
RRM
R
θ
J-A
V
μA
℃/W
测试条件
Test Condition
I
FM
=1.5A,脉冲测试,单个二极管的额定值
I
FM
=1.5A, Pulse measurement, Rating of per diode
V
RM
=V
RRM
,脉冲测试,单个二极管的额定值
V
RM
=V
RRM
, Pulse measurement, Rating of per diode
结和环境之间
Between junction and ambient
最大值
Max
1.05
10
28
正向峰值电压
Peak Forward Voltage
反向峰值电流
Peak Reverse Current
热阻
Thermal Resistance
Document Number 0019
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股½有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd. 
www.21yangjie.com

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