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R4S

Description
Bridge bridge
CategoryDiscrete semiconductor   
File Size86KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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R4S Overview

Bridge bridge

Features

Product name: Bridge


Product model: R4S


Product parameters:


Peak Repetitive Reverse Voltage: VRRM: 400V


Max. Average Rectified Current: IO: 0.5A


Max. Peak Forward Surge Current: IFSM: 30A


Forward Voltage Drop: VF@IF: 1.15V@0.5A


Max. Reverse Current: IR@VR: 5μA@400V



Package: MDI



R4S Preview

Download Datasheet
R1S~R10S
MINI SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE FAST RECOVERY BRIDGE RECTIFIER
VOLTAGE
100 to 1000Volts
FEATURES
0.067(1.7)
0.057(1.3)
CURRENT
0.5 Amperes
C 0.02(0.5)
0.043(1.1)
• Plastic material used carries Underwriters
Laboratory recognition 94V-O
• Low leakage
0.165(4.2)
0.031(0.8)
0.019(0.5)
0.275(7.0)MAX
0.150(3.8)
• Surge overload rating--30 amperes peak
• Ideal for printed circuit board
• Exceeds environmental standards of MIL-S-19500
• Lead free in comply with EU RoHS 2002/95/EC directives
0.193(4.9)
0.177(4.5)
0.014(0.35)
0.006(0.15)
MECHANICAL DATA
• Case: Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
0.035(0.9)
0.051(1.3)
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: Polarity symbols molded or marking on body
• Mounting Position: Any
• Weight: 0.0044 ounce, 0.1268 gram
0.106(2.7)
0.090(2.3)
0.106(2.7)
0.090(2.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, Resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a x i m u m R M S B r i d g e In p u t V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt T
T
A
= 2 5
O
C ( No te 3 )
A
S YM B O L
V
RRM
V
RMS
V
D C
=40
O
C
I
F ( A V )
I
F S M
I
2
t
V
F
I
R
C
J
t
rr
R
θ
J A
R
θ
J L
T
J
, T
S T G
R1 S
100
70
100
R2 S
200
140
200
R4 S
400
280
400
R6 S
600
420
600
0 .5
0 .8 *
30
R8 S
800
560
800
R1 0 S
1000
700
1000
0.008(0.20)
0.027(0.7)
U N IT S
V
V
V
A
A
A
2
t
V
μ
A
pF
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
I
2
t R a t i n g f o r f u s i n g ( t < 8 . 3 5 m s )
M a xi m um F o r w a r d V o l t a g e D r o p p e r B r i d g e E l e m e nt a t
0 .5 A
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng Vo l t a g e T
J
= 1 2 5
O
C
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 1 )
M a x i m u m R e c o v e r y Ti m e ( N o t e 4 )
Ty p i c a l t h e r m a l r e s i s t a n c e p e r l e g ( ( N o t e 2 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
3 .7 3 5
1 .1 5
5 .0
500
25
150
85
20
-5 5 to + 1 5 0
250
500
O
ns
C / W
O
C
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
2. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 X 0.5"(13 X 13mm) copper pads
3. *R-load on alumina subtrate
4. Reverse Recovery Test Conditions : I
F
=0.5A,I
R
=1A,Irr=0.25A
STAD-APR.08.2009
PAGE . 1
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