PTW90N20 datasheet, PDF - EEWORLD Datasheet

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PTW90N20: DescriptionDrain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 94A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 23mΩ @ 56A, 10V Maximum power dissipation (Ta=25°C): 580W (Tc) Type: N channel N channel, 200V, 18m?@10V, 94A; CategoryDiscrete semiconductor MOS (field effect tube); File Size773KB，9 Pages; ManufacturerPerfect Intelligent Power Semiconductor Co.,Ltd.; Websitehttp://www.pipsemi.com/; PIP-Semi is a high-tech company founded in Colorado, USA. The company's R&D team comes from Fairchild, IR, and TFSS. Since its establishment in 2003, it has been focusing on the design and development of advanced semiconductor power devices and integrated circuits, chip processing, and packaging and testing technology. The company develops and produces advanced semiconductor power devices such as VDMOS, SG MOSFET, Coolmos, IGBT, Gate Driver IC, and related power management integrated circuit products, which are widely used in energy saving, green lighting, smart grid, electric vehicles, industrial control equipment, consumer electronics and other fields. The company adheres to the corporate culture of "integrity, trust, confidence, and faith" to provide customers with perfect, innovative, professional products and a full range of services. Creating value for customers is our eternal purpose.

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PTW90N20 Overview

Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 94A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 23mΩ @ 56A, 10V Maximum power dissipation (Ta=25°C): 580W (Tc) Type: N channel N channel, 200V, 18m?@10V, 94A

PTW90N20 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	200V
Continuous drain current (Id) at 25°C	94A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	23mΩ @ 56A,10V
Maximum power dissipation (Ta=25°C)	580W(Tc)
type	N channel

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