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PTF12N65

Description
Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 12A (Tc) Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 650mΩ @ 6A, 10V Maximum power dissipation (Ta=25°C): 50W(Tj) Type: N channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size5MB,5 Pages
ManufacturerhenZhen Puolop Electronics co.,LTD.
Websitehttp://www.puolop.com/
Shenzhen Dipu Electronics Co., Ltd. is one of the earliest leading design and sales companies in China engaged in low-dropout voltage regulator circuits (LDO), MOS tubes, power management ICs and power semiconductor devices. It specializes in the design, production and sales of various power management ICs and power semiconductor devices. Since its establishment, Dipu has developed rapidly, and its products have covered power management ICs (lithium battery charging IC/LDO IC/low voltage detection (reset) IC/DC-DC boost & buck IC/white light backlight IC/voltage reference source IC/voltage regulator IC/DC-DC general conversion IC, etc.), MOS tubes (low voltage MOS/medium voltage high current MOS/high voltage MOS), IGBT, EEPROM IC, audio amplifier IC, clock calendar IC, LED driver IC, high-voltage switch transistors and many other types of hundreds of models. "Quality first, customer first" is not only the business purpose of Dipu, but also the basis for Dipu's continuous and rapid development. We attach great importance to the opinions of customers and try our best to meet customer requirements from beginning to end. We have always believed that quality is the first responsibility of all our colleagues, and we have always been proud of Dipu's strict quality management system.
Download Datasheet Parametric View All

PTF12N65 Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 12A (Tc) Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 650mΩ @ 6A, 10V Maximum power dissipation (Ta=25°C): 50W(Tj) Type: N channel

PTF12N65 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)650V
Continuous drain current (Id) at 25°C12A(Tc)
Gate-source threshold voltage5V @ 250uA
Drain-source on-resistance650mΩ @ 6A,10V
Maximum power dissipation (Ta=25°C)50W(Tj)
typeN channel

PTF12N65 Preview

Download Datasheet
PTF1 2N65
65 0V/1 2A
N-Channel A dv anced Power MOSFET
Features
R
DS(on)
(Typical 0.5
)@V
GS
=10V
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
GDS
TO-220F
Absolute Maximum Ratings
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
Symbol
Parameter
Rating
Unit
Common Ratings (T
J
=25°C Unless Otherwise Noted)
V
GS
Gate-Source Voltage
Drain-Source Breakdown Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
±30
650
-50 to 150
--50 to 150
12
V
V
°C
°C
A
V
(BR)DSS
T
J
T
STG
I
S
Mounted on Large Heat Sink (T
J
=25°C Unless Otherwise Noted)
I
DM
Pulse Drain Current Tested (Sillicon Limit)
Continuous Drain current@V
GS
=10 V
Maximum Power Dissipation
Sing Pulsed Avalanche Energy
(N ote2)
(Note1)
48
A
A
W
mJ
°C/W
°C/W
I
D
P
D
E
AS
R
JC
R
JA
T
C
=25°C
12
50
359
2.5
62.5
Thermal Resistance Junction−to−Case
Thermal Resistance Junction−to−Ambient
Note :
1. Repetitive Rating:Pulse width limited by maximum junction temperature.
2. IL=11.8mH,IAS=7.8 A,VDD=50V,Tj=25
°C
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