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PTA12N65

Description
Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 12A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 750mΩ @ 6A, 10V Maximum power dissipation (Ta=25°C): 73W (Tc) Type: N channel N channel, 650V, 0.60?@10V, 12A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size572KB,8 Pages
ManufacturerPerfect Intelligent Power Semiconductor Co.,Ltd.
Websitehttp://www.pipsemi.com/
PIP-Semi is a high-tech company founded in Colorado, USA. The company's R&D team comes from Fairchild, IR, and TFSS. Since its establishment in 2003, it has been focusing on the design and development of advanced semiconductor power devices and integrated circuits, chip processing, and packaging and testing technology. The company develops and produces advanced semiconductor power devices such as VDMOS, SG MOSFET, Coolmos, IGBT, Gate Driver IC, and related power management integrated circuit products, which are widely used in energy saving, green lighting, smart grid, electric vehicles, industrial control equipment, consumer electronics and other fields. The company adheres to the corporate culture of "integrity, trust, confidence, and faith" to provide customers with perfect, innovative, professional products and a full range of services. Creating value for customers is our eternal purpose.
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PTA12N65 Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 12A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 750mΩ @ 6A, 10V Maximum power dissipation (Ta=25°C): 73W (Tc) Type: N channel N channel, 650V, 0.60?@10V, 12A

PTA12N65 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)650V
Continuous drain current (Id) at 25°C12A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance750mΩ @ 6A,10V
Maximum power dissipation (Ta=25°C)73W(Tc)
typeN channel

PTA12N65 Preview

Download Datasheet
PTP12N65
PTA12N65
650V N-ch Planar MOSFET
General Features
RoHS Compliant
R
DS(ON),typ.
=0.60 Ω@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
BV
DSS
650V
R
DS(ON),typ.
0.60Ω
I
D
12A
Applications
Adaptor
Charger
SMPS Standby Power
G
D
S
G
D
S
Ordering Information
Part Number
PTP12N65
PTA12N65
Package
TO-220
TO-220F
Brand
TO-220
TO-220F
Package No to Scale
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
P
D
Derating Factor above 25℃
T
L
T
J
& T
STG
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
Operating and Storage Temperature Range
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current at V
GS
=10V
Single Pulse Avalanche Energy
Power Dissipation
T
C
=25℃ unless otherwise specified
PTP12N65
650
PTA12N65
Unit
V
±
30
12
A
48
450
125
1.0
300
-55 to 150
73
0.58
mJ
W
W/℃
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
PTP12N65
1.0
62
PTA12N65
1.71
℃/W
100
Unit
©2018 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
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