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PS602R_B0_10001

Description
Rectifier Diode, 1 Phase, 1 Element, 6A, 200V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PS602R_B0_10001 Overview

Rectifier Diode, 1 Phase, 1 Element, 6A, 200V V(RRM), Silicon,

PS602R_B0_10001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Reach Compliance Codenot_compliant
ECCN codeEAR99
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current300 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
Maximum reverse current10 µA
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

PS602R_B0_10001 Preview

Download Datasheet
PS600R~PS608R
FAST SWITCHING RECTIFIERS
VOLTAGE
FEATURES
50 to 800 Volts
CURRENT
6.0 Amperes
P-600
Unit: inch(mm)
1.0(25.4)MIN.
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Glass passivated junction in P600 package.
• Exceeds environmental standards of MIL-S-19500/228
• 6 ampere operation at T
A
=60°C with no thermal runaway.
.052(1.3)
.048(1.2)
.360(9.1)
• Fast switching for high efficiency.
• Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICALDATA
1.0(25.4)MIN.
• Case: Molded plastic, P600
• Terminals: Axial leads, solderable to MIL-STD-750,Method 2026
• Polarity: Color Band denotes cathode end
• Mounting Position: Any
• Weight: 0.0719 ounce, 2.04 gram
.340(8.6)
.360(9.1)
.340(8.6)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Resistive or inductive load, 60Hz.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T
A
= 6 0
O
C
P e a k F o r w a r d S u r g e C u r r e n t : IF M ( s u r g e ) : 8 . 3 m s s i n g l e h a l f s i n e -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 6 . 0 A
M a xi m um F ul l L o a d R e ve r s e C ur r e nt F ul l C yc l e A ve r a g e a t T
J
= 2 5
O
C
M a xi m um D C R e ve r s e C ur r e nt a t R a t e d D C B l o c k i ng V o l t a g e
T
J
= 1 0 0
O
C
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 1 )
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 2 )
Ty p i c a l J u n c t i o n R e s i s t a n c e a t . 3 7 5 " ( 9 . 5 m m ) l e a d l e n g t h
O p e r a t i n g a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
P S 6 0 0 R P S 6 0 1 R P S 6 0 2 R P S 6 0 4 R P S 6 0 6 R P S 6 0 8 R
U N I T S
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
t
rr
C
J
R
θ
J A
T
J
, T
S T G
150
300
10
-5 0 to +1 5 0
O
50
35
50
100
70
100
200
140
200
6 .0
300
1 .3
400
280
400
600
420
600
800
560
800
V
V
V
A
A
V
µ
A
1 0 .0
500
250
500
ns
pF
C /
W
C
O
NOTES:1. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, I
rr
=.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
STAD-FEB.11.2009
1
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