PJX8803_R2_00001 datasheet, PDF

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PJX8803_R2_00001: DescriptionSmall Signal Field-Effect Transistor, 0.6A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6; CategoryDiscrete semiconductor The transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJX8803_R2_00001 Overview

Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6

PJX8803_R2_00001 Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code	compliant
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	0.6 A
Maximum drain-source on-resistance	0.34 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F6
Number of components	2
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PPJX8803

20V P-Channel Enhancement Mode MOSFET – ESD Protected

Voltage

Features



RDS(ON) , VGS@-4.5V, ID@-0.6A<340mΩ



RDS(ON) , VGS@-2.5V, ID@-0.4A<420mΩ



RDS(ON) , VGS@-1.8V, ID@-0.2A<600mΩ



Advanced Trench Process Technology



Specially Designed for Switch Load, PWM Application, etc.



ESD Protected 2KV HBM



Lead free in compliance with EU RoHS 2011/65/EU directive



Green molding compound as per IEC61249 Std.

-20 V

Current

-0.6A

SOT-563

Unit : inch(mm)

(Halogen Free)

Mechanical Data



Case: SOT-563 Package



Terminals: Solderable per MIL-STD-750, Method 2026



Approx. Weight: 0.00009 ounces, 0.0026 grams

Maximum Ratings and Thermal Characteristics

=25 C unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

=25

Derate above 25

SYMBOL

STG

θJA

LIMIT

UNITS

mW/

-20

-0.6

-2.4

300

2.4

-55~150

417

Operating Junction and Storage Temperature Range

Typical Thermal Resistance

Junction to Ambient

(Note 3)

C/W

August 4,2016-REV.03

Page 1

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