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PJE8402_R1_00001

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 700mA Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 150mΩ @ 700mA, 4.5V Maximum power dissipation (Ta =25°C): 300mW Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size334KB,6 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJE8402_R1_00001 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 700mA Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 150mΩ @ 700mA, 4.5V Maximum power dissipation (Ta =25°C): 300mW Type: N-channel

PJE8402_R1_00001 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C700mA
Gate-source threshold voltage1V @ 250uA
Drain-source on-resistance150mΩ @ 700mA,4.5V
Maximum power dissipation (Ta=25°C)300mW
typeN channel

PJE8402_R1_00001 Preview

Download Datasheet
PPJE8402
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
Features
RDS(ON) , VGS@4,5V, ID@0.7A<150mΩ
RDS(ON) , VGS@2.5V, ID@0.5A<220mΩ
RDS(ON) , VGS@1.8V, ID@0.2A<400mΩ
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
20 V
Current
0.7A
SOT-523
Unit : inch(mm)
(Halogen Free)
Mechanical Data
Case : SOT-523 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.00007 ounces, 0.002 grams
Marking : E02
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
a
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
LIMIT
o
UNITS
V
V
A
A
mW
mW/
o
C
o
20
+8
0.7
2.8
300
2.4
-55~150
417
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
May 4,2016-REV.02
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