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PJC7438

Description
50V N-Channel Enhancement Mode MOSFET – ESD Protected
File Size325KB,6 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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50V N-Channel Enhancement Mode MOSFET – ESD Protected

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PPJC7438
50V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
Features
RDS(ON) , VGS@10V, ID@500mA<1.45Ω
RDS(ON) , VGS@4.5V, ID@200mA<1.95Ω
RDS(ON) , VGS@2.5V, ID@100mA<4.0Ω
RDS(ON) , VGS@1.8V, ID@10mA<4.0Ω(typ.)
Advanced Trench Process Technology
ESD Protected 2KV HBM
Specially Designed for Relay driver, Speed line drive, etc.
Lead free in compliance with EU RoHS 2011/65/EU directive
Green molding compound as per IEC61249 Std. (Halogen Free)
50 V
Current
400mA
SOT-323
Unit: inch(mm)
Mechanical Data
Case: SOT-323 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00018 ounces, 0.005 grams
Marking: C38
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
A
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
UNITS
V
V
mA
mA
mW
mW/
o
C
o
o
LIMIT
50
+20
400
1200
350
2.8
-55~150
357
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
June 17,2015-REV.00
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