PJA3416_R1_00001 datasheet, PDF

Datasheet> All Categories > Discrete semiconductor> The transistor> PJA3416_R1_00001

PJA3416_R1_00001: DescriptionDrain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 5.8A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 80mΩ @ 1.6A, 1.8V Maximum power consumption Dispersion (Ta=25°C): 1.25W Type: N-channel; CategoryDiscrete semiconductor The transistor; File Size310KB，6 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJA3416_R1_00001 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 5.8A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 80mΩ @ 1.6A, 1.8V Maximum power consumption Dispersion (Ta=25°C): 1.25W Type: N-channel

PJA3416_R1_00001 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	GREEN, PLASTIC PACKAGE-3
Reach Compliance Code	compliant
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	5.8 A
Maximum drain-source on-resistance	0.027 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	23.2 A
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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