PJ3L85T/R13 datasheet, PDF - EEWORLD Datasheet

PJ3L85T/R13: Description3 PHASE, 0.16 A, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size125KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJ3L85T/R13 Overview

3 PHASE, 0.16 A, SILICON, BRIDGE RECTIFIER DIODE

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	R-PDSO-G6
Contacts	6
Reach Compliance Code	compli
ECCN code	EAR99
Minimum breakdown voltage	85 V
Configuration	BRIDGE, 6 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Maximum non-repetitive peak forward current	0.5 A
Number of components	6
Phase	3
Number of terminals	6
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.16 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.2 W
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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