PJ06N03D datasheet, PDF - EEWORLD Datasheet

PJ06N03D: DescriptionPower Mosfet Power MOSFET; CategoryDiscrete semiconductor The transistor; File Size186KB，5 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJ06N03D Overview

Power Mosfet Power MOSFET

Features

Product Name: Power Mosfet Power MOSFET

Product model: PJ06N03D

Product parameters:

Voltage Range: <=100

Channel: N

Drain-Source Voltage: VDSS: 25V

Gate-Source Voltage Maximum gate-source voltage: VGSS: 20+V

Drain Current: ID: 60A

Maximum Power Dissipation: PD: 83W

Static Drain-Source On-Resistance： Vgs=10V，Rdson (max.)：0.006Ω

Gate Charge: Vgs=10V, Qg: 52.6nC

Input Capacitance: Vds=25V, Ciss: 2090pF

Reverse Transfer Capacitance: Vds=25V, Crss: 386pF

Package: TO-252/DPAK

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	400 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	25 V
Maximum drain current (ID)	60 A
Maximum drain-source on-resistance	0.009 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	320 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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