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P6KE100A

Description
Reverse shutdown voltage (typ.): 85.5V Breakdown voltage (minimum): 95V Polarity: Unidirectional Clamping voltage: 137V Peak pulse current (10/1000us): 4.4A TVS 100V, Ppp=600W Unidirectional
CategoryDiscrete semiconductor    TVS diode   
File Size979KB,7 Pages
ManufacturerCREATEK Microelectronics Co.,Ltd
Websitehttp://www.crea-tek.com/
CREATEK Microelectronics was founded in the United States and entered China in 2009 and reorganized with Chinese companies. It is mainly engaged in the design, manufacture and sales of IGBT, MOSFET, FRD, protection devices, planar magnets, and provides related application solutions. The headquarters is located in China, with a research and development center in San Francisco, a North American sales center, and sales offices in Shenzhen, Shanghai, Suzhou, Taiwan, China, and Singapore.
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P6KE100A Overview

Reverse shutdown voltage (typ.): 85.5V Breakdown voltage (minimum): 95V Polarity: Unidirectional Clamping voltage: 137V Peak pulse current (10/1000us): 4.4A TVS 100V, Ppp=600W Unidirectional

P6KE100A Parametric

Parameter NameAttribute value
Reverse shutdown voltage (typ)85.5V
Breakdown voltage (minimum value)95V
polarityUnidirectional
clamping voltage137V
Peak pulse current (10/1000us)4.4A

P6KE100A Preview

Download Datasheet
P6KE Series
CREATEK Microelectronics
Power TVS
in
DO-15
Features
600Watts
peak pulse power (10/1000μs)
Class passivated junction
High accuracy, 5% tolerance
Uni and Bidirectional unit
Low clamping voltage
Low Leakage current
Very fast response time
Mechanical Data
Applications
Computers
Telecom
systems
Industrial equipments
Consumer
electronic applications
Other VCC bus and I/O interfaces
Case:
DO-15 (plastic package).
Lead free; RoHS compliant
Molding Compound Flammability Rating:
UL 94 V-0
Terminals:
High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Absolute Maximum Ratings
Parameter
Ratings at 25 °C, ambient temperature unless otherwise specified
Symbols
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
R
θJL
R
θJA
Value
600
See Next Table
5.0
100
3.5/5.0
20
75
Unit
W
A
W
A
V
℃/W
℃/W
Peak power dissipation with a 10/1000us waveform
(1)
(Fig. 1)
Peak pulse current with a 10/1000us waveform
(1)
Steady state power dissipation
at T
L
=75℃, lead lengths 0.375" (9.5mm)
(2)
Peak forward surge current 8.3ms single half sine-wave
(3)
Maximum instantaneous forward voltage @ 50A for
(4)
unidirectional only
Typical thermal resistance junction-to-lead
Typical thermal resistance junction-to-ambient
Operating junction and storage temperature range
-55 to +150
T
J
,T
STG
Notes:1.Non-repetitive current pulse, per Fig.3 and derated above T
A
=25℃ per Fig. 2
2. Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
3. Meas ed on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute
.
maximum
4.
.
F
=3.5
V for devices of V
(BR)
< 220V, and V
F
=5.0 Volt max. for devices of V
(BR)
>220V
Rev. 1.0, 23-May-2012
www.crea-tek.com
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