P4KE120 datasheet, PDF - EEWORLD Datasheet

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P4KE120: Descriptiontransient voltage suppression diode; CategoryDiscrete semiconductor diode; File Size2MB，3 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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P4KE120 Overview

transient voltage suppression diode

Features

Product Name: Transient Voltage Suppressor Diode

Product model: P4KE120

product features:

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

400W surge capability at 10×100us waveform, duty cycle: 0.01%

Excellent clamping capability

Low zener impedance

Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirection and 5.0ns for bidirectional

Typical IR less 1uA above 10V

High temperature soldering guaranteed: 250℃/10 seconds/ .375", (9.5mm) Lead length/ 5lbs,.(2.3kg) tension.

Mechanical data:

Cases: Molded plastic

Epoxy:UL94V-0 rate flame retardant

Lead :Axial leads, solderable per MIL- STD-202, Method 208

Polarity: Color band denotes cathode except Bipolar

Weight:0.012 ounce, 0.3 gram

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

product data:

Peak Power Dissipation at TA=25℃, TP=4ms PPK Forward power consumption: Minimun 400W

Steady State Power Dissipation at TL=75℃ PD stable power consumption: 1.0W

Peak Forward Surge Current IFSM Forward pulse current: 40A

Maximum Instaneous Forward Voltage at 25A for Unidirectional Only VF Forward Voltage Drop: 3.5 /6.5V

Operating and Storage Temperature Range Tj. Tstg Operating Junction Temperature: -55 to +175℃

Nominal Voltage: 120V

Breakdown Voltage V(BR) Breakdown Voltage: Min: 108V Max: 132V

Test Current at IT Test current: 1.0mA

Stand-Off Voltage Vwm Stand-Off Voltage: 97.2V

Max Reverse Leakage at Vwm ID Maximum reverse leakage current: 5.0uA

Max Peak Pulse Current IPPM Maximum peak pulse current: 2.4A

Max Clamping Voltage at IPPM VC 最大箝位电压：173V

Maximum Temperature Coefficient of VBR: 0.107%/℃

Package: DO-41

P4KE120 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	unknown
Breakdown voltage nominal value	120 V
Maximum clamping voltage	173 V
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
polarity	UNIDIRECTIONAL
Maximum repetitive peak reverse voltage	97.2 V
surface mount	NO

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