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MMBTA42

Description
500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Categorysemiconductor    Discrete semiconductor   
File Size43KB,2 Pages
ManufacturerNanjing International Group Co.,Ltd
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MMBTA42 Overview

500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

500 mA, 300 V, NPN, 硅, 小信号晶体管, TO-236AB

MMBTA42 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.5000 A
Maximum Collector-Emitter Voltage300 V
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Maximum ambient power consumption0.3500 W
Transistor typeUniversal small signal
Minimum DC amplification factor40
Rated crossover frequency50 MHz

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MMBTA42 / MMBTA43
NPN Silicon High Voltage Transistors
for high voltage switching and amplifier applications.
As complementary types the PNP transistors
MMBTA92 and MMBTA93 are recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature Range
MMBTA42
MMBTA43
MMBTA42
MMBTA43
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
R
θJA
T
j
, T
stg
Symbol
h
FE
h
FE
h
FE
MMBTA42
MMBTA43
MMBTA42
MMBTA43
MMBTA42
MMBTA43
MMBTA42
MMBTA43
I
CBO
I
CBO
I
EBO
I
EBO
V
(BR)CBO
V
(BR)CBO
V
(BR)CEO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
f
T
MMBTA42
MMBTA43
C
ob
C
ob
Value
300
200
300
200
6
500
350
357
- 55 to + 150
Min.
25
40
40
-
-
-
-
300
200
300
200
6
-
-
50
-
-
Max.
-
-
-
0.1
0.1
0.1
0.1
-
-
-
-
-
0.5
0.9
-
3
4
Unit
V
V
V
mA
mW
O
C/W
O
C
Unit
-
-
-
µA
µA
µA
µA
V
V
V
V
V
V
V
MHz
pF
pF
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 10 V, I
C
= 1 mA
at V
CE
= 10 V, I
C
= 10 mA
at V
CE
= 10 V, I
C
= 30 mA
Collector Base Cutoff Current
at V
CB
= 200 V
at V
CB
= 160 V
Emitter Base Cutoff Current
at V
EB
= 6 V
at V
EB
= 4 V
Collector Base Breakdown Voltage
at I
C
= 100 µA
Collector Emitter Breakdown Voltage
at I
C
= 1 mA
Emitter Base Breakdown Voltage
at I
E
= 100 µA
Collector Emitter Saturation Voltage
at I
C
= 20 mA, I
B
= 2 mA
Base Emitter Saturation Voltage
at I
C
= 20 mA, I
B
= 2 mA
Gain Bandwidth Product
at V
CE
= 20 V, I
C
= 10 mA, f = 100 MHz
Collector Output Capacitance
at V
CB
= 20 V, f = 1 MHz
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