MMBT2907A datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> MMBT2907A

MMBT2907A: DescriptionPNP transistor; CategoryDiscrete semiconductor; File Size857KB，1 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

View All

MMBT2907A Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	MMBT2907A	-	-	View	Buy Now

MMBT2907A Overview

PNP transistor

Features

Product Name: PNP Transistor

Product model: MMBT2907A

Product parameters:

Pcm (maximum dissipated power): 250mW

Ic (collector current): 600mA

BVcbo (Collector-Base Breakdown Voltage): 60V

BVceo (Collector-Emitter Breakdown Voltage): 60V

BVebo (emitter-base breakdown voltage): 5V

hFE (current gain): Min: 100, Max: 300

VCE (sat) saturation voltage drop: 1.6V

fT (transition frequency): 200MHz

Package: SOT-23

MMBT2907A Preview

Download Datasheet

View All

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

MMBT2907A

TRANSISTOR (PNP)

SOT-23

FEATURES

Epitaxial planar die construction

Complementary NPN Type available(MMBT2222A)

1. BASE

2. EMITTER

Marking: 2F

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

CEO

EBO

θJA

stg

Parameter

Value

-60

-5

-600

250

500

150

-55 to +150

Unit

℃/W

℃

3. COLLECTOR

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Total Device Dissipation

Thermal Resistance Junction to Ambient

Junction Temperature

Storage Temperature

ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Base cut-off current

Collector cut-off current

Symbol

(BR)CBO

(BR)CEO*

(BR)EBO

CBO

EBO

CEX

FE(1)

FE(2)

DC current gain

FE(3)

FE(4)

FE(5)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Delay time

Rise time

Storage time

Fall time

*Pulse test: t

≤300μs, δ≤0.02.

CE(sat)*

BE(sat)*

=-30V,I

=-150mA,

=-15mA

=-6V,I

=-150mA,

=- I

=- 15mA

Test conditions

=-10μA,I

=-10mA,I

=-10μA,I

=-50V,I

=-3V, I

=-30 V, V

BE(off)

=-0.5V

=-10V,I

=-150mA

=-10V,I

=-0.1mA

=-10V,I

=-1mA

=-10V,I

=-10mA

=-10V,I

=-500mA

=-150mA,I

=-15mA

=-500mA,I

=-50mA

=-150mA,I

=-15mA

=-500mA,I

=-50mA

=-20V,I

=-50mA,f=100MHz

200

225

100

-0.4

-1.6

-1.3

-2.6

MHz

Min

-60

-5

-20

-10

-50

300

Typ

Max

Unit

A,May,2011

Recommended Resources

TA7252P power amplifier circuit diagram

Closed loop speed control

Spike peak measurement circuit diagram

Power line current detection circuit circuit diagram

Type A5349 AC Smoke Detection Circuit - Typical Application

Monostable circuit with self-biasing

What is the IC model of infrared remote control transmitter?: If you need to make infrared transceiver products, you need an infrared remote control transmitter IC.However, the ICs found on the Internet are all old ICs (see below), most of which cannot be found ...; yhye2world Discrete Device

Image frequency suppression measurement: It is a specification for the receiver portion of an RF transceiver. For example, we need to measure the image frequency rejection of a C-band downconverter operating at an input frequency of 3700-420...; btty038 RF/Wirelessly

NUCLEO_G431RB Review - CRC Calculation: Thanks to EEWORLD and ST for providing development boards, board information address Since I used the development tool of Keil 5.18a, I encountered a problem: the ST-LINK V3 version on the board could...; bigbat stm32/stm8

Please help me explain this circuit schematic, how it works, and where each module is.: Please take a look...; 中科绿能 Circuit Observation Room

How to use printf for debugging: I just came into contact with TI chips, and I used the tms320f28069 chip. Now I use the ccs6 tool. I want to use printf debugging. How should I do it? If there is a great god who can solve it, please ...; wuyue123 Microcontroller MCU

Comparison between Internal PA and External FEM: In the Wi-Fi wireless radio architecture, there are three main key components that determine the performance of the Wi-Fi system, namely the Wi-Fi radio chip (Wi-Fi Chipset), front-end radio component...; alan000345 RF/Wirelessly

Popular Components