MD600C12D5 datasheet, PDF - EEWORLD Datasheet

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MD600C12D5: DescriptionRectifier Diode Modules; File Size62KB，2 Pages; ManufacturerAPTSEMI; Jiangsu APT Semiconductor Co., Ltd. is a high-tech enterprise invested and controlled by Yangzhou Yangjie Electronic Technology Co., Ltd., which specializes in the design, manufacture and sale of new power electronic modules and semiconductor intelligent devices with independent intellectual property rights. Products include: IGBT, MOSFET, FRED, thyristor, rectifier and other power modules and their semiconductor devices. It has an annual production capacity of 3 million power modules of various types and is currently one of the domestic power electronic power module production bases. The company's products can be widely used in different fields with a power range of 0.5KW~1MW, including inverters, welding machines, induction heating, uninterruptible power supplies, variable frequency air conditioners, electric vehicles, locomotive traction, solar energy, wind power generation, charging devices, smart grids, household appliances, medical equipment, etc.

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Rectifier Diode Modules

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MD600C18D5

Applications

Rectifier

Non-controllable rectifiers for AC/AC

converters

RRM

800 to 1800V

Line rectifiers for transistorized AC motor

FAV

600 A

controllers

Field supply for DC motors

Diode Modules

Applications

Non-controllable rectifiers for AC/AC

converters

Line rectifiers for transistorized AC motor

controllers

Field supply for DC motors

Circuit

Features

Blocking voltage: 800 to 1800V

Heat transfer through aluminum oxide ceramic

isolated metal baseplate

Module Type

TYPE

MD600C08D5

MD600C12D5

MD600C16D5

MD600C18D5

MD600A08D5

MD600A12D5

MD600A16D5

MD600A18D5

MD600K08D5

MD600K12D5

MD600K16D5

MD600K18D5

RRM

800V

1200V

1600V

1800V

RSM

900V

1300V

1700V

1900V

Maximum Ratings

Symbol

Conditions

Single phase ,half wave 180°conduction Tc=85℃

FAV

t=10mS Tvj =45℃

FSM

t=10mS Tvj =45℃

a.c.50HZ;r.m.s.;1min

isol

stg

Weight

To terminals(M10)

To heatsink(M6)

Values

600

22000

2420000

3000

-40 to 150

-40 to 125

9±15%

5±15%

2050

Units

℃

Module (Approximately)

Thermal Characteristics

Symbol

Per diode

th(j-c)

Module

th(c-s)

Electrical Characteristics

Symbol

Conditions

Values

0.04

0.015

Units

℃/W

Conditions

T=25℃ I

=1800A

=TvjM V

RRM

Values

Min.

－

Typ.

－

Max.

1.8

Units

Document Number: S-M0014

Rev.1.0, May.31, 2013

www.apt-semi.com

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