BAV23S datasheet, PDF - EEWORLD Datasheet

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BAV23S: DescriptionSwitching, VR=250V VRM=175V Trr<50nS Polarity one Yin one Yang SOT-23; CategoryDiscrete semiconductor Switching diode; File Size2MB，2 Pages; ManufacturerBORN SEMICONDUCTOR（SHENZHEN）CO.,LTD.; Websitehttp://www.born-tw.com/; BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.

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Switching, VR=250V VRM=175V Trr<50nS Polarity one Yin one Yang SOT-23

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BAV23A-C-S

SWITCHING

SOT-23

SOT-23 Fast Switching Diode

ROHS

Features



Fast Switching Device (TRR <50nS)



Power Dissipation of 350mW



High Stability and High Reliability



Low reverse leakage

Mechanical Data



SOT -23 Small Outline Plastic Package



Mounting Position: Any

MARKING:

Maximum Ratings & Thermal Characteristics

(

Ratings at 25℃ ambient temperature unless otherwise specified.)

Parameters

Reverse Voltage

Peak Repetitive Reverse Voltage

Power Dissipation

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current

@t=8.3ms; TA=25

℃

Operating junction temperature

Storage temperature range

Thermal Resistance from Junction to Ambient

Valid provided that electrodes are kept at ambient temperature.

Symbol

RRM

FSM

θJA

Value

250

175

350

225

1.7

150

-55-+150

357

Unit

℃

℃/W

Electrical Characteristics

(

Ratings at 25℃

Symbols

(BR)

ambient temperature unless otherwise specified).

Parameter

Reverse Voltage

Reverse Leakage Current

Forward Voltage

Reverse Recovery Time

Capacitance

Test Condition

IR=100uA

VR=200V

IF=100mA

IF=200mA

IF= IR=30mA

RL=100Ω

IRR=0.1 X IR

VR=0V, f=1MHZ

Limits

Min

250

---

Max

0.1

1.00

1.25

Unit

Rev 8: Nov 2014

www.born-tw.com

Page 1 of 2

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