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MD250S08M3

Description
Glass Passivated Three Phase Rectifier Bridge
File Size85KB,3 Pages
ManufacturerAPTSEMI
Jiangsu APT Semiconductor Co., Ltd. is a high-tech enterprise invested and controlled by Yangzhou Yangjie Electronic Technology Co., Ltd., which specializes in the design, manufacture and sale of new power electronic modules and semiconductor intelligent devices with independent intellectual property rights. Products include: IGBT, MOSFET, FRED, thyristor, rectifier and other power modules and their semiconductor devices. It has an annual production capacity of 3 million power modules of various types and is currently one of the domestic power electronic power module production bases. The company's products can be widely used in different fields with a power range of 0.5KW~1MW, including inverters, welding machines, induction heating, uninterruptible power supplies, variable frequency air conditioners, electric vehicles, locomotive traction, solar energy, wind power generation, charging devices, smart grids, household appliances, medical equipment, etc.
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Glass Passivated Three Phase Rectifier Bridge

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MD250S18M3
Glass Passivated Three
Phase Rectifier Bridge
V
RRM
800 to 1800V
I
D
250 A
Applications
Three phase rectifiers for power supplies
Rectifiers for DC motor field supplies
Battery charger rectifiers
Input rectifiers for variable frequency drives
Circuit
+
~
~
~
-
Module Type
TYPE
MD250S08M3
MD250S12M3
MD250S16M3
MD250S18M3
Features
Three phase bridge rectifier
Blocking voltage:800 to 1800V
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
Glass passivated chip
UL recognized applied for file no. E360040
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
I
D
I
FSM
i
2
t
Visol
Tvj
Tstg
Mt
Ms
Weight
Conditions
Three phase, full wave
Tc=100℃
t=10mS Tvj =45℃
t=10mS Tvj =45℃
a.c.50HZ;r.m.s.;1min
Values
250
2500
31250
3000
-40 to +150
-40 to +125
5±15%
5±15%
230
Units
A
A
A
2
s
V
Nm
Nm
g
To terminals (M6)
To heatsink (M6)
Module (Approximately)
Thermal Characteristics
Symbol
Rth(j-c)
Rth(c-s)
Per diode
Conditions
Values
0.36
0.02
Units
℃/W
℃/W
Module (Approximately)
Electrical Characteristics
Symbol
V
FM
I
RD
T=25℃ I
F
=300A
T
vj
=25℃ V
RD
=V
RRM
T
vj
=150℃ V
RD
=V
RRM
Conditions
Values
Min.
Typ.
1.35
Max.
1.6
0.5
6
Units
V
mA
mA
Document Number: S-M0024
Rev.1.0, May.31, 2013
www.apt-semi.com
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