MD200K12D2 datasheet, PDF - EEWORLD Datasheet

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MD200K12D2: DescriptionGlass Passivated Rectifier Diode Modules; File Size127KB，3 Pages; ManufacturerAPTSEMI; Jiangsu APT Semiconductor Co., Ltd. is a high-tech enterprise invested and controlled by Yangzhou Yangjie Electronic Technology Co., Ltd., which specializes in the design, manufacture and sale of new power electronic modules and semiconductor intelligent devices with independent intellectual property rights. Products include: IGBT, MOSFET, FRED, thyristor, rectifier and other power modules and their semiconductor devices. It has an annual production capacity of 3 million power modules of various types and is currently one of the domestic power electronic power module production bases. The company's products can be widely used in different fields with a power range of 0.5KW~1MW, including inverters, welding machines, induction heating, uninterruptible power supplies, variable frequency air conditioners, electric vehicles, locomotive traction, solar energy, wind power generation, charging devices, smart grids, household appliances, medical equipment, etc.

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Glass Passivated Rectifier Diode Modules

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MD200C18D2

Applications

Glass Passivated

Non-controllable rectifiers for AC/AC

Diode Modules

converters

Line rectifiers for transistorized AC motor

controllers

RRM

800 to 1800V

Field

FAV

supply for DC motors

200 Amp

Rectifier

Applications

Non-controllable rectifiers for AC/AC

converters

Line rectifiers for transistorized AC motor

controllers

Field supply for DC motors

Circuit

Features

Blocking voltage:800 to 1800V

Heat transfer through aluminum oxide ceramic

isolated metal baseplate

Glass passivated chip

UL recognized applied for file no. E360040

Module Type

TYPE

MD200C08D2

MD200C12D2

MD200C16D2

MD200C18D2

MD200A08D2

MD200A12D2

MD200A16D2

MD200A18D2

MD200K08D2

MD200K12D2

MD200K16D2

MD200K18D2

RRM

800V

1200V

1600V

1800V

RSM

900V

1300V

1700V

1900V

Maximum Ratings

Symbol

Conditions

Single phase ,half wave 180°conduction Tc=95℃

FAV

t=10mS Tvj =45℃

FSM

t=10mS Tvj =45℃

a.c.50HZ;r.m.s.;1min

isol

stg

Weight

To terminals(M6)

To heatsink(M6)

Values

200

6800

231200

3000

-40 to 150

-40 to 125

5±15%

160

Units

℃

Module (Approximately)

Thermal Characteristics

Symbol

Per diode

th(j-c)

Module

th(c-s)

Electrical Characteristics

Symbol

T=25℃ I

=300A

Conditions

Values

0.18

0.05

Units

℃/W

Conditions

=150℃ V

RRM

=25℃

Values

Min.

－

Typ.

1.18

－

1.13

0.84

Max.

1.30

Units

mΩ

Document Number: S-M0008

Rev.1.0, May.31, 2013

www.apt-semi.com

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