MBSK18M datasheet, PDF - EEWORLD Datasheet

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MBSK18M: DescriptionBridge Rectifier Diode, Schottky, 1A, 80V V(RRM),; CategoryDiscrete semiconductor diode; File Size108KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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Bridge Rectifier Diode, Schottky, 1A, 80V V(RRM),

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MBSK12M THRU MBSK110M

肖特基桥式整流器

Schottky Bridge Rectifier

■特征

Features

●

■外½尺寸和印记

Outline Dimensions and Mark

MBM

1.0A

RRM

20V~100V

●

肖特基芯片

Schottky chip

●

耐正向浪涌电流½力高

High surge forward current capability

●

½正向电压

Low VF

.157(4.00)

.142(3.60)

.287(7.3)

.248(6.3)

.209(5.3)

.189(4.8)

.193(4.90)

.177(4.50)

.053(1.53)

.037(0.95)

.013(0.33)

.0088(0.22)

■用途

Applications

●

½一般电源单相桥式整流用

General purpose 1 phase Bridge

rectifier applications

.106(2.70)

.090(2.30)

.252(6.4)

.236(6.0)

.033(0.84)

.022(0.56)

.109(2.75)

.089(2.25)

■极限值（绝对最大额定值）

Limiting Values（Absolute Maximum Rating）

参数名称

Item

反向重复峰值电压

Repetitive Peak Reverse

Voltage

平均整流输出电流

Average Rectified Output

Current

正向（不重复）浪涌电流

Surge(Non-

repetitive)Forward Current

正向浪涌电流的平方对电流

浪涌持续时间的积分值

Current Squared Time

存储温度

Storage Temperature

结温

Junction Temperature

Dimensions in inches and (millimeters)

符号单½

Symbol Unit

RRM

条件

Conditions

12M

MBSK

14M 16M 18M

110M

100

60Hz正弦波，电阻负½½，Ta=25℃

60Hz sine wave, R-load, Ta=25℃

60H

正弦波，一个周期，T

=25℃

60H

sine wave, 1 cycle, T

=25℃

1ms≤t<8.3ms Tj=25℃，单个二极管

1ms≤t<8.3ms Tj=25℃，Rating of per diode

1.0

FSM

℃

6.6

-55 ~+150

stg

■电特性（T

a=25℃

除非另有规定）

Electrical Characteristics

（T

=25℃ Unless otherwise specified）

参数名称

Item

正向峰值电压

Peak Forward Voltage

反向峰值电流

Peak Reverse Current

符号单½

Symbol Unit

测试条件

Test Condition

=0.5A,

脉冲测试，单个二极管的额定值

=0.5A, Pulse measurement, Rating of per

diode

RRM

,脉冲测试，单个二极管的额定值

RRM

, Pulse measurement, Rating of

per diode

结和环境之间，安装在玻璃-环氧基板上

Between junction and ambient, On glass-

epoxi substrate

结和引线之间

Between junction and lead

0.55

最大值

Max

0.65

0.85

RRM

0.5

热阻

Thermal Resistance

J-A

℃/W

J-L

134

Document Number 0005

Rev. 1.0, 22-Sep-11

扬州扬杰电子科技股½有限公司

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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