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MBR8100DC_R2_10001

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 100V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-3/2
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR8100DC_R2_10001 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 100V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-3/2

MBR8100DC_R2_10001 Parametric

Parameter NameAttribute value
MakerPANJIT
package instructionTO-263, D2PAK-3/2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.8 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage100 V
Maximum reverse current50 µA
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationSINGLE

MBR8100DC_R2_10001 Preview

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MBR840DC~MBR8200DC
D
2
PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Lead free in compliance with EU RoHS 2011/65/EU directive
40 to 200 Volts
CURRENT
8 Ampere
MECHANICALDATA
• Case: TO-263/D
2
PAK molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.0514 ounces, 1.46 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d ( S e e F i g ur e 1 )
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 4 . 0 A
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng Vo l t a g e T
J
= 1 0 0
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
R
θ
J C
T
J
, T
S T G
MB R8 4 0 D C MB R8 4 5 D C MB R8 5 0 D C MB R8 6 0 D C MB R8 8 0 D C MB R8 9 0 D C MB R8 1 0 0 D C MB R8 1 5 0 D C MB R8 2 0 0 D C
U N IT S
V
V
V
A
A
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
8
150
90
63
90
100
70
100
150
105
150
200
140
200
0 .7 0
0 .7 5
0 .0 5
20
3
0 .8 0
0.90
V
mA
O
C / W
O
-5 5 to +1 5 0
-65 to +175
C
NOTES : Both Bonding and Chip structure are available.
STAD-APR.30.2009
PAGE . 1
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