MBR5H200SS_R2_10001 datasheet, PDF

MBR5H200SS_R2_10001: DescriptionRectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, DO-201AD,; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR5H200SS_R2_10001 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, DO-201AD,

Parameter Name	Attribute value
Maker	PANJIT
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.9 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-55 °C
Maximum output current	5 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	0.5 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	WIRE
Terminal location	AXIAL

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