MBR3040CT datasheet, PDF - EEWORLD Datasheet

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MBR3040CT: DescriptionSchottky diodes; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR3040CT Overview

Schottky diodes

Features

Product Name: Schottky Diode

Product model: MBR3040CT

parameter:

Repetitive reverse voltage peak Vrrm: 40V

Maximum average rectified current Io: 30A

Maximum forward surge current I FSM: 275A

Forward voltage drop VF: 0.7V when IF=15A

Maximum feedback current IR: 50uA when VR=40V

Package: TO-220AB

MBR3040CT Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	TO-220AB
package instruction	R-PSFM-T3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	275 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	15 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	40 V
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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MBR3040CT SERIES

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

0.624(15.87)

0.548(13.93)

40 to 200 Volts

CURRENT

30 Amperes

0.419(10.66)

0.387(9.85)

0.139(3.55)

MIN.

0.196(5.00)

0.163(4.16)

0.054(1.39)

0.045(1.15)

• Metal silicon junction, majority carrier conduction

• Low power loss, high efficiency.

• High current capability

• Guardring for overvoltage protection

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• In compliance with EU RoHS 2002/95/EC directives

0.177(4.5)

MAX.

0.058(1.47)

0.042(1.07)

0.038(0.96)

0.019(0.50)

0.50(12.7)MIN.

0.115(2.92)

0.080(2.03)

0.025(0.65)MAX.

MECHANICAL DATA

• Case: TO-220AB molded plastic

• Terminals: solder plated, solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Mounting Position: Any

• Weight: 0.0655 ounces, 1.859 grams.

0.100(2.54)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PA RA ME TE R

Ma xi mum Re curre nt P e ak Re ve rse Voltag e

Ma xi mum RMS Vo lta g e

Ma xi mum D C B lo cki ng Vo lta ge

Ma xi mum A vera g e F o rwa rd C urre nt

P e ak Fo rward S urg e C urre nt

：

8.3 ms si ng le

ha lf si ne-wa ve sup e ri mp o se d o n ra te d lo a d

(JE D E C metho d )

Ma xi mum F o rwa rd Vo lta ge at 1 5A p e r leg

Ma xi mum D C Re ve rse C urrent

at Ra te d D C B lo cki ng Voltag e

Typ i cal Therma l Resi sta nce

Op erati ng Juncti o n a nd S to ra ge Te mp e ra ture

Ra ng e

=25

=12 5

S YMB OL

RRM

RMS

F(AV)

FS M

JC

STG

MB R30 40 CT MB R3 04 5C T MB R30 50 CT MB R30 60 CT MBR3 08 0C T MB R3 09 0C T MB R3 01 00 C T MBR3 01 50C T MB R30 20 0C T

UNITS

31 .5

1 00

15 0

10 5

15 0

2 00

140

2 00

275

0 .7

0 .7 5

0 .1

1 .4

0 .8

0.0 5

0.9

C /W

-5 5 to + 1 50

-6 5 to + 1 75

Note :

Both Bonding and Chip structure are available.

March 09,2011-REV.04

PAGE . 1

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