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MBR30150CT_10001

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size96KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR30150CT_10001 Overview

Rectifier Diode

MBR30150CT_10001 Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
Diode typeRECTIFIER DIODE
Base Number Matches1

MBR30150CT_10001 Preview

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MBR3040CT SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• For use in low voltage, high frequency inverters
free wheeling, and polarlity protection applications.
• Lead free in comply with EU RoHS 2011/65/EU directives
40 to 200 Volts
CURRENT
30 Amperes
MECHANICAL DATA
• Case: TO-220AB molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
Ma xi mum Re curre nt P e ak Re ve rse Voltag e
Ma xi mum RMS Vo lta g e
Ma xi mum D C B lo cki ng Vo lta ge
Ma xi mum A vera g e F o rwa rd C urre nt
P e ak Fo rward S urg e C urre nt
8.3 ms si ng le
ha lf si ne-wa ve sup e ri mp o se d o n ra te d lo a d
(JE D E C metho d )
Ma xi mum F o rwa rd Vo lta ge at 1 5A p e r leg
Ma xi mum D C Re ve rse C urrent
at Ra te d D C B lo cki ng Voltag e
Typ i cal Therma l Resi sta nce
Op erati ng Juncti o n a nd S to ra ge Te mp e ra ture
Ra ng e
T
J
=25
O
C
T
J
=12 5
O
C
S YMB OL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FS M
V
F
I
R
R
θJC
T
J
,T
STG
MB R30 40 CT MB R3 04 5C T MB R30 50 CT MB R30 60 CT MBR3 08 0C T MB R3 09 0C T MB R3 01 00 C T MBR3 01 50C T MB R30 20 0C T
UNITS
V
V
V
A
40
28
40
45
31 .5
45
50
35
50
60
42
60
80
56
80
30
90
63
90
1 00
70
1 00
15 0
10 5
15 0
2 00
140
2 00
275
A
0 .7
0 .7 5
0 .1
20
1 .4
0 .8
0.0 5
20
0.9
V
mA
O
C /W
O
-5 5 to + 1 50
-6 5 to + 1 75
C
Note :
Both Bonding and Chip structure are available.
January 3,2013-REV.05
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