MBR2080FCT_T0_10001 datasheet, PDF

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MBR2080FCT_T0_10001: DescriptionRectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 80V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR2080FCT_T0_10001 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 80V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

MBR2080FCT_T0_10001 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	ITO-220AB, 3 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.8 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	200 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	10 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	80 V
Maximum reverse current	50 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE

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MBR2040FCT SERIES

20 AMPERES SCHOTTKY BARRIER RECTIFIERS

VOLTAGE

FEATURES

0.134(3.4)

0.118(3.0)

0.272(6.9)

0.248(6.3)

40 to 200 Volts

CURRENT

20 Amperes

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

• Metal silicon junction, majority carrier conduction

• Low power loss, high efficiency.

• High current capability

• Guardring for overvlotage protection

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• Lead free in comply with EU RoHS 2011/65/EU directives

0.112(2.85)

0.100(2.55)

0.406(10.3)

0.381(9.7)

0.189(4.8)

0.165(4.2)

0.130(3.3)

0.114(2.9)

0.606(15.4)

0.583(14.8)

MECHANICAL DATA

• Case: ITO-220AB molded plastic

• Terminals: solder plated, solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Mounting Position: Any

• Weight: 0.055 ounces, 1.5615 grams.

0.055(1.4)

0.039(1.0)

0.055(1.4)

0.039(1.0)

0.028(0.7)

0.019(0.5)

0.100(2.55)

0.177(4.5)

0.137(3.5)

0.543(13.8)

0.512(13.0)

0.114(2.9)

0.098(2.5)

0.100(2.55)

0.027(0.67)

0.022(0.57)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PA RAME TE R

Maxi mum Recurre nt P eak Re verse Voltage

Maxi mum RM S V oltage

Maxi mum D C B lo cki ng V oltage

Maxi mum A ve ra ge F orward C urrent

(S ee fi g .1)

Pea k F orward S urg e C urrent : 8.3ms si ngle

half s i ne-wa ve s uperi mposed on ra te d load

(J ED E C method)

Maxi mum F o rward Voltage at 10A , pe r leg

Maxi mum D C Re verse C urre nt T

=25

at Rated D C Blo cki ng Voltage T

=125

Typi ca l The rmal R es i s tance

Ope ra ting and S torage J unc ti o n

Temperature Range

SYMB OL

RRM

RMS

F (AV )

F S M

θJ

S TG

MB R2040FC T MB R2045F C T MB R2050F C T MB R2060F C T MB R208 0FC T MB R2090FC T MB R20100FC T MB R20150F C T MB R20200 FC T

UNITS

31.5

200

10 0

1 50

1 05

1 50

20 0

140

20 0

0.7

0.75

0.0 5

0.8

0.9

C / W

-55 to + 150

-65 to +175

Notes :

Both Bonding and Chip structure are available.

April 22,2011-REV.04

PAGE . 1

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