MBR10H250CT_T0_10001 datasheet, PDF

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MBR10H250CT_T0_10001: DescriptionRectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 250V V(RRM), Silicon, TO-220AB,; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR10H250CT_T0_10001 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 250V V(RRM), Silicon, TO-220AB,

MBR10H250CT_T0_10001 Parametric

Parameter Name	Attribute value
Maker	PANJIT
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.9 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	150 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	175 °C
Minimum operating temperature	-55 °C
Maximum output current	5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	250 V
Maximum reverse current	0.5 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE

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BD10H200CS \ MBR10H200CT \ MBR10H200FCT \ MBR10H200DC SERIES

ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS

Voltage

Features



Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

200~250 V

Current

10 A

TO-252



Low power loss, high efficiency.



High current capability



High junction temperature capability



Lead free in compliance with EU RoHS 2011/65/EU directive



Green molding compound as per IEC61249 Std. .(Halogen Free) (TO-252)

TO-220AB

Mechanical Data



Case: TO-252, TO-220AB, ITO-220AB, TO-263 package



Terminals: solder plated, solderable per MIL-STD-750,Method 2026



TO-252 Weight: 0.0104 ounces, 0.297 grams



TO-220AB Weight: 0.067 ounces, 1.89 grams.



ITO-220AB Weight: 0.056 ounces, 1.6 grams.



TO-263 Weight: 0.051 ounces, 1.46 grams.



Marking: Part number

TO-252

TO-220AB

TO-263

ITO-220AB

200V

BD10H200CS

MBR10H200CT

MBR10H200DC

MBR10H200FCT

250V

BD10H250CS

MBR10H250CT

MBR10H250DC

MBR10H250FCT

ITO-220AB

TO-263

Maximum Ratings And Electrical Characteristics

=25 C unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Maximum rms voltage

Maximum dc blocking voltage

Maximum average forward rectified per device

current

per diode

Peak forward surge current : 8.3ms single half sine-

wave superimposed on rated load per diode

Maximum forward voltage at 5A per diode

Maximum dc reverse current

at rated dc blocking voltage

=25

=125

TO-252 (Note 1)

Typical thermal resistance

TO-220AB(Note 1)

TO-263(Note 1)

ITO-220AB(Note 1)

Operating junction temperature range

Storage temperature range

Note : 1. Semi-infinite heatsink

November 19,2014-REV.01

Page 1

STG

JC

SYMBOL

RRM

RMS

F(AV)

FSM

200V

200

140

200

150

0.9

0.5

-55 to +175

250V

250

175

250

UNIT

A

C/W

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