MBR1090CT_00001 datasheet, PDF

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MBR1090CT_00001: DescriptionRectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 90V V(RRM), Silicon, TO-220AB, HALOGEN FREE, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR1090CT_00001 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 90V V(RRM), Silicon, TO-220AB, HALOGEN FREE, PLASTIC PACKAGE-3

MBR1090CT_00001 Parametric

Parameter Name	Attribute value
Maker	PANJIT
package instruction	HALOGEN FREE, PLASTIC PACKAGE-3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.8 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	150 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	90 V
Maximum reverse current	50 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE

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MBR1040CT~MBR10200CT

10 AMPERES SCHOTTKY BARRIER RECTIFIERS

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

• Metal silicon junction, majority carrier conduction

• Low power loss, high efficiency.

• High current capability

• Guardring for overvlotage protection

• For use in low voltage, high frequency inverters

free wheeling, and polarlity protection applications.

• Lead free in comply with EU RoHS 2011/65/EU directives

40 to 200 Volts

CURRENT

10 Amperes

MECHANICAL DATA

• Case: TO-220AB molded plastic

• Terminals: solder plated, solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Mounting Position: Any

• Weight: 0.0655 ounces, 1.859 grams.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive loa d.

For capacitive load, derate current by 20%

PA RA ME TE R

M a xi mum Re curre nt P e a k Re ve rse Vo lta g e

M a xi mum R M S Vo lta g e

M a xi mum D C B lo ck i ng Vo lta g e

M a xi mum A ve ra g e F o rwa rd C urre nt (S e e fi g .1 )

P e a k F o rwa rd S urg e C urre nt : 8 .3 ms si ng le ha lf si ne -

wa ve s up e ri mp o se d o n ra te d lo a d (JE D E C me tho d )

M a xi mum F o rwa rd Vo lta g e a t 5 A , p e r le g

M a xi mum D C Re ve rse C urre nt a t Ra te d D C

B lo c ki ng Vo lta g e

Typ i ca l The rma l Re s i s ta nce

Op e ra ti ng a nd S to ra g e Juncti o n Te mp e r a ture Ra ng e

=2 5

=1 2 5

S YMB OL

RRM

RMS

F ( AV )

F S M

S TG

MB R10 4 0 MB R1 04 5 MB R1 05 0 MB R10 60 MB R10 80 MB R1 09 0 MB R1 01 00 MB R1 01 50 MB R1 02 00

UNITS

3 1 .5

150

100

150

105

150

200

140

200

0 .7

0 .7 5

0 .0 5

0 .8

0.9

C / W

-5 5 to +

1 50

-6 5 to + 1 7 5

Notes :

Both Bonding and Chip structure are available.

December 17,2012-REV.02

PAGE . 1

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