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MBR10200FCT

Description
SCHOTTKY BARRIER RECTIFIER Schottky rectifier
CategoryDiscrete semiconductor   
File Size540KB,2 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet View All

MBR10200FCT Overview

SCHOTTKY BARRIER RECTIFIER Schottky rectifier

Features

Product Name: SCHOTTKY BARRIER RECTIFIER Schottky rectifier


Product Model:MBR10200FCT


Product Description:


Schottky Barrier Chip


Guard Ring Die Construction for Transient Protection


Low Power Loss,High Efficiency


High Surge Capability


High Current Capability and Low Forward Voltage Drop


For Use in Low Voltage, High Frequency Inverters,Free Wheeling,


and Polarity Protection Applications



parameter:


PD (power consumption): 2W


Io (average rectified output current): 10A


VR (DC blocking voltage): 200V


VF (forward voltage): 0.84V


IR (Reverse Current): 0.005mA


Package: TO-220F

MBR10200FCT Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
MBR10150FCT
SCHOTTKY BARRIER RECTIFIER
TO-220F
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( T
a
=25
unless otherwise noted )
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
D
R
ΘJA
T
j
T
stg
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
105
10
120
2
50
125
-55~+150
V
A
A
W
℃/W
150
V
Value
Unit
ELECTRICAL CHARACTERISTICS (T
a
=25
unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Forward voltage
Typical total capacitance
Symbol
V
(BR)
I
R
V
F
C
tot
Test conditions
I
R
=0.1mA
V
R
=150V
I
F
=5A
V
R
=5V,f=1MHz
500
Min
150
0.2
0.85
Typ
Max
Unit
V
mA
V
pF
A,Jun,2011
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