MB56_R1_00001 datasheet, PDF - EEWORLD Datasheet

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MB56_R1_00001: DescriptionRectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 60V V(RRM), Silicon, DO-214AB, SMC, 2 PIN; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MB56_R1_00001 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 60V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

MB56_R1_00001 Parametric

Parameter Name	Attribute value
Maker	PANJIT
package instruction	R-PDSO-C2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW POWER LOSS
application	EFFICIENCY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.74 V
JEDEC-95 code	DO-214AB
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak forward current	100 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	60 V
Maximum reverse current	50 µA
surface mount	YES
technology	SCHOTTKY
Terminal form	C BEND
Terminal location	DUAL
Base Number Matches	1

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MB54~MB520

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

• For surface mounted applications

• Low profile package

• Built-in strain relief

• Metal to silicon rectifier. majority carrier conduction

• Low power loss,high efficiency

• High surge capacity

• For use in low voltage high frequency inverters, free wheeling,

and polarity protection applications

•

Lead free in comply with EU RoHS 2011/65/EU directives

•

Green molding compound as per IEC61249 Std. . (Halogen Free)

40 to 200 Volts

CURRENT

5.0 Amperes

MECHANICAL DATA

• Case: JEDEC DO-214AB molded plastic

• Terminals:Solder plated, solderable per MIL-STD-750, Method 2026

• Polarity: Color band denotes positive end (cathode)

• Standard packaging: 16mm tape (EIA-481)

• Weight: 0.0082 ounce, 0.2325 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.

PA RA M E TE R

M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e

M a xi m um R M S V o l t a g e

M a xi m um D C B l o c k i ng V o l t a g e

A ve r a g e R e c t i f i e d O ut p ut C ur r e nt

( S e e F i g ur e 1 )

N o n- R e p e t i t i ve P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s

s i ng l e ha l f s i ne - w a ve s up e r i m p o s e d o n r a t e d l o a d

F o rwa rd Vo lta g e a t 5 .0 A (No te 1 )

P e a k R e ve r s e C ur r e nt T

= 2 5

a t R a t e d D C B l o c k i ng Vo l t a g e T

= 1 0 0

Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 2 )

O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e

S YM B O L

RRM

RMS

D C

F ( A V )

F S M

J A

J L

, T

S TG

MB 54

MB 54A

MB 55

MB 56

MB 58

MB 59

MB 510

MB 515

MB 520

U N IT S

3 1 .5

5 .0

100

150

105

150

200

140

200

0 .7 0

0 .7 4

0 .0 5

0 .8 0

0.9

C /

-5 5 to +1 5 0

-6 5 to +1 7 5

NOTES:

1. Pulse Test with PW =300µsec, 1% Duty Cycle.

2. Mounted on P.C. Board with 14mm

(.013mm thick) copper pad areas.

STAD-APR.09.2009

PAGE . 1

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