MB315_R2_10001 datasheet, PDF - EEWORLD Datasheet

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MB315_R2_10001: DescriptionRectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-214AB, SMC, 2 PIN; CategoryDiscrete semiconductor diode; File Size78KB，5 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MB315_R2_10001 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

MB315_R2_10001 Parametric

Parameter Name	Attribute value
Maker	PANJIT
package instruction	SMC, 2 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.9 V
JEDEC-95 code	DO-214AB
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak forward current	100 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	150 V
Maximum reverse current	50 µA
surface mount	YES
technology	SCHOTTKY
Terminal form	C BEND
Terminal location	DUAL

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MB34~MB320

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

CURRENT

40 to 200 Volts

3 Amperes

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

• For surface mounted applications in order to optimize board space

• Metal to silicon rectifier. majority carrier conduction

• Low power loss,high efficiency

• High surge capacity

• For use in low voltage high frequency inverters, free wheeling,

and polarity protection applications

• Lead free in comply with EU RoHS 2002/95/EC directives

0.128(3.25)

0.108(2.75)

0.245(6.22)

0.220(5.59)

0.280(7.11)

0.260(6.60)

0.012(0.305)

0.006(0.152)

0.103(2.62)

0.079(2.00)

0.008(0.203)

0.002(0.051)

MECHANICAL DATA

•

Case: JEDEC DO-214AB molded plastic

Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Standard packaging: 16mm tape (EIA-481)

Weight: 0.0082 ounce, 0.2325 gram

0.050(1.27)

0.030(0.76)

0.320(8.13)

0.305(7.75)

Cathode

Anode

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.

PA RA ME TE R

Maxi mum Recurrent P eak Reverse Voltage

Maxi mum RMS Voltage

Maxi mum D C B locki ng Voltage

Maxi mum A verage Forward C urrent (S ee fi gure 1)

P eak Forward S urge C urrent :8.3ms si ngle half si ne-wave

superi mposed on rated load(JE D E C method)

Maxi mum Forward Voltage at 3.0A ( Note 1)

Maxi mum D C Reverse C urrent T

=25

at Rated D C B locki ng Voltage T

=100

Typi cal Thermal Resi stance ( Note 2)

O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e

R a ng e

S YMB OL

R R M

R M S

D C

F ( A V )

F S M

J L

J A

, T

S T G

MB 34

MB 34A

MB 35

MB 36

MB 38

MB 39

MB 310

MB 315

MB 320

UNITS

3 1 .5

3.0

100

150

105

150

200

140

200

0.70

0.74

0.05

0.80

0.90

C/W

-55 to +150

-65 to +175

NOTES:

1. Pulse Test with PW =300µsec, 1% Duty Cycle.

2. Mounted on P.C. Board with 8.0mm

(.013mm thick) copper pad areas.

October 2,2012-REV.05

PAGE . 1

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