MB10F datasheet, PDF - EEWORLD Datasheet

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MB10F: DescriptionReverse peak voltage: 1000V Average rectified current (Io): 500mA Forward voltage drop (Vf): 1V @ 400mA . 0.8A; CategoryDiscrete semiconductor Rectifier bridge; File Size612KB，2 Pages; ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.; Websitehttp://www.microdiode.com/; Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.

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MB10F Overview

Reverse peak voltage: 1000V Average rectified current (Io): 500mA Forward voltage drop (Vf): 1V @ 400mA . 0.8A

MB10F Parametric

Parameter Name	Attribute value
Reverse peak voltage	1000V
Average rectified current (Io)	500mA
Forward voltage drop (Vf)	1V @ 400mA

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MB2F THRU MB10F

SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS

Voltage Range - 200 to 1000 Volts Current - 0.5/0.8 Ampere

MBF

FEATURES

Glass passivated die construction

Low forward voltage drop

High current capability

High surge current capability

Designed for surface mount application

Plastic material-UL flammability 94V-0

MECHANICAL DATA

Case:

MBF,molded plastic

Terminals:

Plated leads solderable per MIL-STD-750,

Method 2026

Polarity:

Polarity symbols marked on case

Mounting Position:

Any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load, for capacitive load derate current by 20%.

MDD Catalog Number

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

at T

=30

On glass-epoxy P.C.B.

On aluminum substrate

Peak forward surge current,

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage drop

per leg at 0.5A

Maximum DC reverse current

=25

at rated DC blocking voltage

=125

Typical junction capactiance per leg(Note3)

Typical thermal resistance per leg

Operating temperature range

storage temperature range

SYMBOLS

MDD

MB2F

200

140

200

MDD

MB4F

400

280

400

MDD

MB6F

600

420

600

0.5

MDD

MB8F

800

560

800

MDD

MB10F

1000

700

1000

UNITS

VOLTS

Amps

RRM

RMS

F(AV)

0.8

FSM

Amps

STG

1.1

5.0

500

-55 to +150

Volts

NOTES:1.On glass epoxy P.C.B. mounted on 0.05x0.05''(1.3x1.3mm) pads

2.On aluminum substrate P.C.B. with on area of 0.8''x0.8''(20x20mm) mounted on 0.05X0.05''(1.3X1.3mm) solder pad

3.Measured at 1.0MHz and applied reverse voltage of 4.0 volts.

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