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M7

Description
1.0A SURFACE MOUNT RECTIFIERS 1.0A Surface Mount Rectifier
CategoryDiscrete semiconductor   
File Size275KB,4 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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M7 Overview

1.0A SURFACE MOUNT RECTIFIERS 1.0A Surface Mount Rectifier

Features

Product Name: 1.0A SURFACE MOUNT RECTIFIERS 1.0 ampere surface mount rectifier


Product model: M7


product features:


For surface mounted application


Metal to silicon rectifier,majority carrier conduction


Low forward voltage drop


Easy pick and place


High surge current capability


Plastic materal used carriers Underwriters Laboratory Classification 94-O


Epitaxial construction


High temperature soldering:


260℃/10 seconds at terminals



Mechanical data:


Case: Molded plastic


Terminals: Solder plated


Polarity: Indicated by cathode band


Packaging: 12mm tape per EIA STD RS-481


Weight: 0.064 gram



Maximum Ratings and Electrical Characteristics:


Rating at 25℃ ambient temperature unless otherwise specified.


Single phase, half wave, 60 Hz, resistive or inductive load.


For capacitive load, derate current by 20%



product data:


Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 1000V



Maximum RMS Voltage VRMS Voltage effective value: 700V



Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 1000V



Maximum Average Forward Rectified Current @TL=110℃ IF(AV) Maximum forward current: 1.0 A



Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 30 A



Maximum Instantaneous Forward Voltage @ 1.0A VF Maximum forward voltage drop: 1.1 V



Maximum Reverse Current at Rated @TA=25℃ IR Maximum reverse leakage current: 5.0μA


DC blocking voltage @TA= 125℃ IR Maximum reverse leakage current: 50μA



Typical Thermal Resistance (Note) RθJL thermal resistance coefficient: 30 ℃/W; RθJA thermal resistance coefficient: 85 ℃/W



Operating Temperature Range TJ Operating Junction Temperature: -55 to +150 ℃



Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃



Package: SMA-W


M7 Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)1kV
Average rectified current (Io)1A
Forward voltage drop (Vf)1.1V @ 1A

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M1 THRU M7 
 
RoHS
COMPLIANT
Surface Mount General Purpose Rectifier
Features
Low profile package
Ideal for automated placement
Glass passivated chip junction
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Typical Applications
For use in general purpose rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer and telecommunication.
Mechanical Data
Package:
DO-214AC (SMA) 
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity:
Cathode line denotes the cathode end
Maximum Ratings
(Ta=25℃ Unless otherwise specified
PARAMETER
Device marking code
Repetitive peak reverse voltage
Average rectified output current
@60Hz sine wave, Resistance load, Ta (FIG.1)
Surge(non-repetitive)forward current
@ 60Hz Half-sine wave,1 cycle, Ta=25℃
Current squared time
@1ms≤t≤8.3ms Tj=25℃,Rating of per diode
Storage temperature
Junction temperature
VRRM
IO
V
A
SYMBOL
UNIT
M1
M1
50
M2
M2
100
M3
M3
200
M4
M4
400
1.0
M5
M5
600
M6
M6
800
M7
M7
1000
IFSM
A
30
I
2
t
Tstg
Tj
AS
2
3.7
-55~+150
-55 ~ +150
■Electrical
Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum DC reverse current at
rated DC blocking voltage per diode
@ VRM=VRRM
SYMBOL
VF
UNIT
V
TEST
CONDITIONS
IFM=1.0A
Ta=25℃
IRRM
μA
Ta=100℃
100
M1
M2
M3
M4
1.1
5
M5
M6
M7
1/4
S-S1682
Rev.1.3,08-Nov-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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