M12L16161A-5TVAG2Q datasheet, PDF

M12L16161A-5TVAG2Q: DescriptionSynchronous DRAM, 1MX16, 4.5ns, CMOS, PDSO50, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50; Categorystorage storage; File Size706KB，29 Pages; ManufacturerESMT; Websitehttp://www.esmt.com.tw/; Elite Semiconductor Memory Technology Inc. (ESMT) is a professional IC design company founded by Dr. Hu Zhao in June 1998. Its headquarters is located in Hsinchu Science Park, Taiwan. The company's main business includes research, development, manufacturing, sales and related technical services of IC products. It was listed on the Taiwan Stock Exchange in March 2002.

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M12L16161A-5TVAG2Q Overview

Synchronous DRAM, 1MX16, 4.5ns, CMOS, PDSO50, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50

Parameter Name	Attribute value
Maker	ESMT
package instruction	TSOP2,
Reach Compliance Code	unknown
access mode	DUAL BANK PAGE BURST
Maximum access time	4.5 ns
Other features	AUTO REFRESH
JESD-30 code	R-PDSO-G50
length	20.95 mm
memory density	16777216 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	50
word count	1048576 words
character code	1000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	105 °C
Minimum operating temperature	-40 °C
organize	1MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
width	10.16 mm

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