EEWORLDEEWORLDEEWORLD

Part Number

Search

LSD70R450GT

Description
Drain-source voltage (Vdss): 700V Continuous drain current (Id) (at 25°C): 11A Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 450mΩ @ 5.5A, 10V Maximum power dissipation ( Ta=25°C): 33W Type: N channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1002KB,13 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
Download Datasheet Parametric View All

LSD70R450GT Overview

Drain-source voltage (Vdss): 700V Continuous drain current (Id) (at 25°C): 11A Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 450mΩ @ 5.5A, 10V Maximum power dissipation ( Ta=25°C): 33W Type: N channel

LSD70R450GT Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)700V
Continuous drain current (Id) at 25°C11A
Gate-source threshold voltage4.5V @ 250uA
Drain-source on-resistance450mΩ @ 5.5A,10V
Maximum power dissipation (Ta=25°C)33W
typeN channel

LSD70R450GT Preview

Download Datasheet
LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT
LonFET
Lonten N-channel 700V, 11A, 0.45Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
750V
0.45Ω
30A
23nC
junction
technology.
The
Power MOSFET is fabricated using
super
advanced
resulting device has extremely low on resistance,
making it especially suitable for applications which
require superior power density and outstanding
efficiency.
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 23nC)
100% UIS tested
RoHS compliant
TO-220MF
TO-263
TO-262
TO-251
TO-252
D
Applications
G
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Avalanche current, repetitive
3)
Power Dissipation
TO-220MF ( T
C
= 25° )
C
- Derate above 25°
C
P
D
Power Dissipation
TO-262 ( T
C
= 25° )
C
- Derate above 25°
C
Mounting torque To-262 ( M3 and M3.5 screws )
Mounting torque To-220MF ( M2.5 screws )
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
125
1
60
Ncm
50
-55 to +150
11
30
°
C
A
A
W
W/°
C
I
DM
V
GSS
E
AS
E
AR
I
AR
V
DSS
I
D
Symbol
Value
700
11
7
30
±30
270
0.5
11
33
0.26
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°
C
Version 2.0
2018
1
www.lonten.cc
[TI Recommended Course] #[High Precision Lab] Operational Amplifier: 8 Noise#
//training.eeworld.com.cn/TI/show/course/1944...
54chenjq TI Technology Forum
C2000 LaunchPad - External Interrupt Toggle LED
Program function: Configure GPIO12 as interrupt input. When the button is pressed, a falling edge interrupt is triggered, and the interrupt service subroutine flips the LED. Interrupt vector tableMain...
fish001 Microcontroller MCU
The three-child birth policy is here, what are your plans?
The Political Bureau of the CPC Central Committee held a meeting on May 31, which pointed out that further optimizing the birth policy and implementing the policy of allowing a couple to have three ch...
eric_wang Talking
8 Must-See Switching Power Supply Layout Tips
For a switching power supply engineer, PCB drawing is actually a crucial part that affects a product. If you cannot do a good layout, the entire power supply may not work properly, and the smallest pr...
ohahaha PCB Design
NUCLEO_G431RB review->File structure & ST-Link online debugging experience
NUCLEO_G431RB ReviewPlatform constructionI tried MDK514 before and found the same problem as http://bbs.21ic.com/icview-2861476-1-1.html?ordertype=1, so I downloaded the latest version of MDK528A dire...
elike stm32/stm8
[Repost] Is wireless charging useless or a black technology?
[align=left][color=rgb(25, 25, 25)][font="]In the past two years, major mobile phone manufacturers have been enthusiastic about wireless charging. As of December last year, there were 135 mobile phone...
皇华Ameya360 Power technology

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号