EEWORLDEEWORLDEEWORLD

Part Number

Search

LSD65R180GF

Description
Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 20A (Tc) Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 180mΩ @ 10A, 10V Maximum power dissipation (Ta=25°C): 34W(Tc) Type: N channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,13 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
Download Datasheet Parametric View All

LSD65R180GF Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 20A (Tc) Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 180mΩ @ 10A, 10V Maximum power dissipation (Ta=25°C): 34W(Tc) Type: N channel

LSD65R180GF Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)650V
Continuous drain current (Id) at 25°C20A(Tc)
Gate-source threshold voltage5V @ 250uA
Drain-source on-resistance180mΩ @ 10A,10V
Maximum power dissipation (Ta=25°C)34W(Tc)
typeN channel

LSD65R180GF Preview

Download Datasheet
LSB65R180GF/ LSC65R180GF/ LSD65R180GF/ LSE65R180GF/ LSF65R180GF
LonFET
Lonten N-channel 650V, 20A, 0.18Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Power MOSFET is fabricated
using advanced super junction technology.
The resulting device has extremely low on
resistance, making it especially suitable for
applications which require superior power
density and outstanding efficiency.
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
700V
0.18Ω
60A
39nC
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 39nC)
100% UIS tested
RoHS compliant
D
TO-247
TO-220MF
TO-263
TO-220
TO-262
Applications
Power faction correction (PFC).
Switched
(SMPS).
mode
power
supplies
G
S
N-Channel MOSFET
Pb
Uninterruptible power supply (UPS).
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25°C )
( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Avalanche current, repetitive
3)
Power Dissipation TO-247/TO-263/TO-262/TO-220
( T
C
= 25°C )
- Derate above 25°C
Power Dissipation TO-220MF ( T
C
= 25°C )
- Derate above 25°C
Mounting torque To-220MF ( M2.5 screws )
Operating and Storage Temperature Range
Continuous diode forward current
T
J
, T
STG
I
S
I
S,pulse
P
D
34
0.28
50
-55 to +150
20
W
W/°C
Ncm
°C
A
A
I
DM
V
GSS
E
AS
E
AR
I
AR
V
DSS
I
D
Symbol
Value
650
20
13
60
±30
600
0.4
20
205
1.64
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°C
Version 5.1,Sep-2019
Diode pulse current
1
60
www.lonten.cc
[Detailed and practical] Chinese illustration of every parameter of power MOS tube!
[p=26, null, left][color=rgb(79, 79, 79)][font="]The first part of the maximum rating parameters [/font][/color][/p][p=26, null, left][color=rgb(79, 79, 79)][font="]The maximum rating parameters, all ...
btty038 Power technology
Last day! TI live broadcast with prizes | IoT display solutions using DLP micro-projection technology
Live Topic IoT Display Solutions Using DLP Pico Projection Technology Live broadcast time June 22, 2022 (Wednesday) 10:00-11:30 am Introduction Introduce how to use DLPmicro-projection technology to a...
EEWORLD社区 TI Technology Forum
C6000DSP heap and stack
stack -also known as the system stack, is used to:save the return address after a function call;allocate storage space for local variables;pass function parameters;save temporary results; heap -Some f...
fish001 DSP and ARM Processors
SPI cannot receive data, please help
My project needs to receive water level data from the host computer and then process it. Now the project progress is stuck on data reception. The host computer uses 51 chip. The serial port assistant ...
hujj GD32 MCU
Potential uses of UWB technology
Potential uses of UWB technology 1. Automation Self-driving cars need reliable and ultra-fast sensors to ensure they don’t accidentally drive at full speed into an abandoned JC Penney. What better tec...
兰博 RF/Wirelessly
Circuit parameters of real op amp
This is a voltage follower circuit. The circuit input is 0-10V (10K ohm variable resistor), the power supply is 0-15V (single power supply), and the op amp is LM358. My friend said this is the worst o...
bigbat Analog electronics

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号