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LSD65R099GF

Description
Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 40A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 99mΩ @ 20A, 10V Maximum power consumption Dispersion (Ta=25°C): 35W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,10 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
Download Datasheet Parametric View All

LSD65R099GF Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 40A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 99mΩ @ 20A, 10V Maximum power consumption Dispersion (Ta=25°C): 35W(Tc) Type: N-channel

LSD65R099GF Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)650V
Continuous drain current (Id) at 25°C40A(Tc)
Gate-source threshold voltage4.5V @ 250uA
Drain-source on-resistance99mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)35W(Tc)
typeN channel

LSD65R099GF Preview

Download Datasheet
LSB65R099GF/LSD65R099GF/LSE65R099GF
LonFET
Lonten N-channel 650V, 40A, 0.099Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Power MOSFET is fabricated using
advanced super junction technology.
The resulting
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
700V
0.099Ω
120A
66nC
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 66nC)
100% UIS tested
RoHS compliant
TO-247
TO-220MF
TO-263
D
Applications
G
S
N-Channel MOSFET
Pb
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25°C )
( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Power Dissipation TO-247 ( T
C
= 25°C )
- Derate above 25°C
Power Dissipation TO-220MF ( T
C
= 25°C )
- Derate above 25°C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
I
DM
V
GSS
E
AS
V
DSS
I
D
Symbol
Value
650
40
26
120
±30
1000
278
2.22
35
0.28
-55 to +150
40
120
Unit
V
A
A
A
V
mJ
W
W/°C
W
W/°C
°C
A
A
Version 2.1,Sep-2019
1
www.lonten.cc
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