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LPSC3487

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 4.3A Gate-source threshold voltage: 2.2V @ 250uA Drain-source on-resistance: 46mΩ @ 4.3A, 10V Maximum power dissipation (Ta=25°C): 1.3W Type: P-channel P-channel -30V -4.3A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size568KB,7 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
Download Datasheet Parametric View All

LPSC3487 Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 4.3A Gate-source threshold voltage: 2.2V @ 250uA Drain-source on-resistance: 46mΩ @ 4.3A, 10V Maximum power dissipation (Ta=25°C): 1.3W Type: P-channel P-channel -30V -4.3A

LPSC3487 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C4.3A
Gate-source threshold voltage2.2V @ 250uA
Drain-source on-resistance46mΩ @ 4.3A,10V
Maximum power dissipation (Ta=25°C)1.3W
typeP channel

LPSC3487 Preview

Download Datasheet
LPSC3487
Lonten P-channel -30V, -4.3A, 46mΩ Power MOSFET
Description
These P-Channel enhancement mode power field
effect
transistors
are
using
trench
DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and with
stand high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency fast switching applications.
Product Summary
V
DSS
R
DS(on).max
@ V
GS
=-10V
I
D
-30V
46mΩ
-4.3A
Pin Configuration
Features
-30V,-4.3A,R
DS(ON).max
=46mΩ@V
GS
=-10V
Improved dv/dt capability
Fast switching
Green device available
SOT-23
Applications
PWM applications
Load switch
Portable Equipment
T
A
= 25°C unless otherwise noted
P-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current ( T
A
= 25° )
C
Symbol
V
DSS
Value
-30
-4.3
Unit
V
A
A
A
V
W
°
C
°
C
I
D
Continuous drain current ( T
A
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Power Dissipation ( T
A
= 25° )
C
Storage Temperature Range
Operating Junction Temperature Range
I
DM
V
GSS
P
D
T
STG
T
J
-2.7
-17.2
±20
1.3
-55 to +150
-55 to +150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Symbol
R
θJA
Value
96
Unit
°
C/W
Version 1.2, May-2019
1
www.lonten.cc
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