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LNG4N65

Description
Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 4A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.7Ω @ 2A, 10V Maximum power consumption Dispersion (Ta=25°C): 77W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size940KB,12 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
Download Datasheet Parametric View All

LNG4N65 Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 4A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.7Ω @ 2A, 10V Maximum power consumption Dispersion (Ta=25°C): 77W(Tc) Type: N-channel

LNG4N65 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)650V
Continuous drain current (Id) at 25°C4A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance2.7Ω @ 2A,10V
Maximum power dissipation (Ta=25°C)77W(Tc)
typeN channel

LNG4N65 Preview

Download Datasheet
LNC4N65\LND4N65\LNG4N65\LNH4N65\LNF4N65
Lonten N-channel 650V, 4A Power MOSFET
Description
The Power MOSFET is fabricated using the
advanced planar VDMOS technology.
superior
The
resulting device has low conduction resistance,
switching performance and high
avalance energy.
Product Summary
V
DSS
I
D
R
DS(on),max
Q
g,typ
650V
4A
2.70Ω
12 nC
Features
Low R
DS(on)
Low gate charge (typ. Q
g
= 12 nC)
100% UIS tested
RoHS compliant
G
TO-251
TO-252
TO-220
TO-220F
TO-262
D
Applications
Power faction correction.
Switched mode power supplies.
LED driver.
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Peak diode recovery dv/dt
3)
Power Dissipation
TO-220F ( T
C
= 25° )
C
Derate above 25°
C
Power Dissipation
TO-220\ TO-251\ TO-252\TO-262 ( T
C
= 25° )
C
Derate above 25°
C
Operating juncition and storage temperature range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
77
0.61
-55 to +150
4
16
W
W/°
C
°
C
A
A
I
DM
V
GSS
E
AS
dv/dt
V
DSS
I
D
Symbol
Value
650
4
2.5
16
±30
198
5
32
0.26
Unit
V
A
A
A
V
mJ
V/ns
W
W/°
C
Thermal Characteristics
Parameter
Thermal resistance, Junction-to-case
Thermal resistance, Junction-to-ambient
Symbol
R
θJC
R
θJA
Value
TO-220F
3.8
62.5
TO-220\TO-251\TO-252\TO-262
1.62
110
Unit
°
C/W
°
C/W
Version 1.4
2018
1
www.lonten.cc
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