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LND18N50

Description
Drain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 18A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 280mΩ @ 9A, 10V Maximum power dissipation (Ta=25°C): 54W(Tc) Type: N channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,9 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
Download Datasheet Parametric View All

LND18N50 Overview

Drain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 18A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 280mΩ @ 9A, 10V Maximum power dissipation (Ta=25°C): 54W(Tc) Type: N channel

LND18N50 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)500V
Continuous drain current (Id) at 25°C18A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance280mΩ @ 9A,10V
Maximum power dissipation (Ta=25°C)54W(Tc)
typeN channel

LND18N50 Preview

Download Datasheet
LNC18N50/LND18N50
Lonten N-channel 500V, 18A Power MOSFET
Description
The Power MOSFET is fabricated using the
advanced
planar
VDMOS
technology.
The
resulting device has low conduction resistance,
superior switching performance and high avalanche
energy.
Product Summary
V
DSS
I
D
R
DS(on),max
Q
g,typ
500V
18A
0.28Ω
50.5 nC
Features
Low R
DS(on)
Low gate charge (typ. Q
g
=50.5 nC)
100% UIS tested
RoHS compliant
G
S
N-Channel MOSFET
Pb
TO-220
TO-220F
D
Applications
Electronic ballast
Switched mode power supplies.
UPS.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25°C )
( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Peak diode recovery dv/dt
3)
Power Dissipation TO-220F ( T
C
= 25°C )
Derate above 25°C
Power Dissipation TO-220 ( T
C
= 25°C )
Derate above 25°C
Operating junction and storage temperature range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
I
DM
V
GSS
E
AS
dv/dt
V
DSS
I
D
Symbol
Value
500
18
11.4
72
±30
810
5
54
0.43
232
1.86
-55 to +150
18
72
Unit
V
A
A
A
V
mJ
V/ns
W
W/°C
W
W/°C
°C
A
A
Thermal Characteristics
Parameter
Thermal resistance, Junction-to-case
Symbol
R
θJC
R
θJA
Value
TO-220F
2.31
62.5
TO-220
0.54
62.5
Unit
°C/W
°C/W
Version 1.1,Jan-2020
Thermal resistance, Junction-to-ambient
1
www.lonten.cc
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