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LNC07R085H

Description
Drain-source voltage (Vdss): 70V Continuous drain current (Id) (at 25°C): 85A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 8.5mΩ @ 30A, 5V Maximum power consumption Dispersion (Ta=25°C): 125W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size892KB,8 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
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LNC07R085H Overview

Drain-source voltage (Vdss): 70V Continuous drain current (Id) (at 25°C): 85A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 8.5mΩ @ 30A, 5V Maximum power consumption Dispersion (Ta=25°C): 125W(Tc) Type: N-channel

LNC07R085H Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)70V
Continuous drain current (Id) at 25°C85A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance8.5mΩ @ 30A,5V
Maximum power dissipation (Ta=25°C)125W(Tc)
typeN channel

LNC07R085H Preview

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LNC07R085H&LNE07R085H
Lonten N-channel 70V, 85A, 8.5mΩ Power MOSFET
Description
These N-Channel enhancement mode power field
effect
transistors
are
using
trench
DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and with
stand high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency fast switching applications.
Product Summary
V
DSS
R
DS(on).max
@ V
GS
=10V
I
D
70V
8.5mΩ
85A
Pin Configuration
Features
70V, 85A, R
DS(ON).max
=8.5mΩ@V
GS
=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
Motor Drives
UPS
DC-DC Converter
N-Channel MOSFET
Pb
TO-220
TO-263
G
D
Applications
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current ( T
C
= 25°C )
Continuous drain current ( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy
2)
Power Dissipation ( T
C
= 25°C )
Storage Temperature Range
sOperating Junction Temperature Range
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
P
D
T
STG
T
J
Value
70
85
55
340
±20
144
125
-55 to +150
-55 to +150
Unit
V
A
A
A
V
mJ
W
°C
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Symbol
R
θJC
Value
1.0
Unit
°C/W
Version 0.3,Jan-2020
1
www.lonten.cc
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