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LDD60U10W4

CategoryDiscrete semiconductor    Super fast recovery diode   
File Size477KB,6 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
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LDC60U10W4\LDD60U10W4
600V 10A Fast Recovery Diode
Description
FRED
from
Lonten
utilizes
advanced
processing
techniques to achieve ultra-fast recovery times and
higher forward current. Its soft recovery characteristics
and high reliability suit for wide industrial applications
.
Product Summary
600V
10A
FRED
TO-220 Pin Configuration
Features
Low power loss, high efficiency
High reliability
RoHS product
TO-220HF-2L
TO-220C-2L
Applications
A
K
A
K
Active power factor correction
Switch power supply
PFC
Absolute Maximum Ratings
Parameter
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current( Tc = 110℃)
RMS Forward Current( Tc = 110℃)
Non-Repetitive Surge Forward Current(TJ =
45℃,t=10ms,50Hz,Sine)
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Module-to-Sink(Recommended M3)
T
C
= 25° unless otherwise noted
C
Symbol
V
R
V
RRM
I
F(AV)
I
F(RMS)
I
FSM
Value
600
600
10
21
150
Unit
V
V
A
A
A
P
D
T
J
T
STG
Torque
Weight
83
-50 to +150
-50 to +150
1.1
2.1
W
Nm
g
Thermal Characteristics TO-220HF2L
Parameter
Thermal Resistance, Junction-to-Case
R
θJC
Symbol
Value
3.5
Unit
°
C/W
Thermal Characteristics TO-220C2L
Parameter
Thermal Resistance, Junction-to-Case
R
θJC
Symbol
Value
2.2
Unit
°
C/W
Version 1.0 , 2016
1
www.lonten.cc
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